STPS60H100CT STMicroelectronics, STPS60H100CT Datasheet - Page 3

• Manufacturer Part Number: STPS60H100CT
• Description: DIODE SCHOTTKY 100V2X30A TO220AB
• Manufacturer: STMicroelectronics

Specifications of STPS60H100CT

• Voltage - Forward (vf) (max) @ If: 840mV @ 30A
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: 497-3812; 497-3812-5

STPS60H100C
Figure 1.
Figure 3.
Figure 5.
0.001
0.01
0.1
26
24
22
20
18
16
14
12
10
400
350
300
250
200
150
100
0.01
8
6
4
2
0
1
50
1.E-03
0
0
P
P
P
F(AV)
ARM
I (A)
M
ARM p
I
M
(1µs)
(W)
(t )
5
δ
0.1
=0.5
t
Average forward power dissipation
versus average forward current (per
diode)
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
δ = 0.05
10
1.E-02
δ = 0.1
1
I
15
F(AV)
t (µs)
p
t(s)
(A)
δ = 0.2
20
10
1.E-01
δ = 0.5
25
δ
=tp/T
100
δ = 1
30
T =125°C
T =50°C
T
T =75°C
C
C
C
1.E+00
tp
1000
35
Figure 2.
Figure 4.
Figure 6.
1.2
0.8
0.6
0.4
0.2
1
0
35
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
5
0
0
P
1.E-03
0
I
P
ARM
F(AV)
Z
ARM p
th(j-c)
Single pulse
δ
=tp/T
(25°C)
(A)
(t )
/R
25
25
T
th(j-c)
Average forward current versus
ambient temperature (
diode)
Normalized avalanche power
derating versus junction
temperature
Relative variation of thermal
impedance junction to case versus
pulse
tp
50
1.E-02
50
R
th(j-a)
T
75
amb
T (°C)
=15°C/W
R
j
t (s)
th(j-a)
p
75
(°C)
=R
th(j-c)
100
1.E-01
100
125
Characteristics
δ
= 0.5, per
125
150
1.E+00
175
150
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