STTH3003CW STMicroelectronics, STTH3003CW Datasheet
STTH3003CW
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STTH3003CW Summary of contents
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... Surge non repetitive forward current FSM I Non repetitive peak reverse current RSM T Storage temperature range stg Tj Maximum operating junction temperature October 1999 - Ed 300 V 175 ° Parameter Tc = 135 sinusoidal square STTH3003CW TO-247 Value Unit 300 Per diode 30 Per device 140 -65 +175 ...
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... STTH3003CW THERMAL RESISTANCES Symbol R Junction to case th (j- (c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Reverse leakage current V ** Forward voltage drop F Pulse test : * ms, < 380 s, < evaluate the maximum conduction losses use the following equation : 0. 0.017 I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol trr ...
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... Fig values, per diode). S factor 0.60 VR=200V Tj=125°C 0.50 0.40 0.30 IF=IF(av) 0.20 0.10 0.00 0 STTH3003CW Tj=125°C Tj=25°C Tj=75°C VFM(V) 0.75 1.00 1.25 1.50 1.75 2.00 Peak reverse recovery current versus IF=2*IF(av) IF=IF(av) dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 Softness factor versus dI dIF/dt(A/µ ...
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... STTH3003CW Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference 125°C). 2.6 2.4 2.2 2.0 1.8 S factor 1.6 1.4 1.2 1.0 IRM 0.8 0.6 0.4 Tj(°C) 0.2 0 Fig. 9: Forward recovery time versus dI confidence, per diode). tfr(ns) 500 450 400 350 ...
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... Dia. Package Weight TO-247 4.36g STMicroelectronics GROUP OF COMPANIES http://www.st.com STTH3003CW DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.85 5.15 0.191 2.20 2.60 0.086 0.40 0.80 0.015 1.00 1.40 0.039 3.00 0.118 2.00 0.078 2.00 2.40 0.078 3.00 3.40 0.118 10 ...