MMBD6100LT1G ON Semiconductor, MMBD6100LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBD6100LT1G
• Description: DIODE SWITCH DUAL 70V SOT23S
• Manufacturer: ON Semiconductor

Specifications of MMBD6100LT1G

• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Switching Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.5 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 2.5 pF
• Current, Forward: 200 mA
• Current, Surge: 500 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 4 ns
• Voltage, Forward: 1.1 V
• Voltage, Reverse: 70 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBD6100LT1GOS; MMBD6100LT1GOS; MMBD6100LT1GOSTR

A
A1
E
1
3
D
e
2
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
SOLDERING FOOTPRINT*
PACKAGE DIMENSIONS
0.8
VIEW C
L1
L
MMBD6100LT1
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
q
0.25
c
3
SCALE 10:1
0.037
0.95
NOTES:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
4. 318−01 THRU −07 AND −09 OBSOLETE,
STYLE 9:
ANSI Y14.5M, 1982.
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
NEW STANDARD 318−08.
0.079
DIM
PIN 1. ANODE
A1
H
L1
A
D
E
2.0
b
c
e
L
E
inches
2. ANODE
3. CATHODE
mm
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.047
0.070
0.004
0.014
0.083
0.110
MIN
INCHES
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
NOM
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX