MMBD6100LT1G ON Semiconductor, MMBD6100LT1G Datasheet - Page 9

• Manufacturer Part Number: MMBD6100LT1G
• Description: DIODE SWITCH DUAL 70V SOT23S
• Manufacturer: ON Semiconductor

Specifications of MMBD6100LT1G

• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Switching Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.5 A
• Configuration: Dual Common Cathode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 0.1 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 2.5 pF
• Current, Forward: 200 mA
• Current, Surge: 500 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Rectifier
• Speed, Switching: Switching
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -55 to +150 °C
• Time, Recovery: 4 ns
• Voltage, Forward: 1.1 V
• Voltage, Reverse: 70 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMBD6100LT1GOS; MMBD6100LT1GOS; MMBD6100LT1GOSTR

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Issue Date: 11 Jul 2008
Rev.07-02-06
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