BAT54AWT1G ON Semiconductor, BAT54AWT1G Datasheet - Page 3

• Manufacturer Part Number: BAT54AWT1G
• Description: DIODE SCHOTTKY DUAL 30V SOT-323
• Manufacturer: ON Semiconductor

Specifications of BAT54AWT1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT54AWT1G; BAT54AWT1GOSTR

+10 V
100
1.0
0.1
50 W OUTPUT
GENERATOR
10
0.0
PULSE
820 W
1 50°C
0.1
0.1 mF
85°C
100 mH
2 k
Figure 2. Forward Voltage
V
F
1 25°C
, FORWARD VOLTAGE (V)
25°C
0.2
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
I
F
−40°C
0.3
DUT
14
12
10
2. Input pulse is adjusted so I
3. t
8
2
6
4
0
0
Figure 1. Recovery Time Equivalent Test Circuit
p
» t
0.4
rr
−55°C
OSCILLOSCOPE
0.1 mF
5
50 W INPUT
SAMPLING
Figure 4. Total Capacitance
0.5
V
R
, REVERSE VOLTAGE (V)
http://onsemi.com
10
0.6
R(peak)
15
3
V
R
0.001
1000
0.01
is equal to 10 mA.
100
1.0
0.1
10
t
r
INPUT SIGNAL
20
0
10%
90%
T
A
t
= 150°C
p
25
5
Figure 3. Leakage Current
T
V
R
, REVERSE VOLTAGE (V)
10
30
F
) of 10 mA.
I
I
R
F
15
(I
F
= I
at i
OUTPUT PULSE
R
20
= 10 mA; measured
R(REC)
t
rr
i
R(REC)
T
T
= 1 mA)
T
A
A
25
A
= 125°C
= 25°C
= 85°C
= 1 mA
T
30