NSDEMP11XV6T1G ON Semiconductor, NSDEMP11XV6T1G Datasheet - Page 2
NSDEMP11XV6T1G
Manufacturer Part Number
NSDEMP11XV6T1G
Description
DIODE SWITCH QUAD CA 80V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.NSDEMP11XV6T1G.pdf
(3 pages)
Specifications of NSDEMP11XV6T1G
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
0.1 A
Max Surge Current
2 A
Configuration
Double Dual Common Anode
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NSDEMP11XV6T1GOS
NSDEMP11XV6T1GOS
NSDEMP11XV6T1GOSTR
NSDEMP11XV6T1GOS
NSDEMP11XV6T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSDEMP11XV6T1G
Manufacturer:
ON
Quantity:
4 000
Company:
Part Number:
NSDEMP11XV6T1G
Manufacturer:
ON Semiconductor
Quantity:
1 100
3. t
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
100
rr
1.0
0.1
10
Test Circuit for NSDEMP11XV6T1 in Figure 4.
0.2
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Characteristic
0.4
Figure 1. Forward Voltage
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85°C
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1
A
0.6
1.75
0.75
1.25
TYPICAL ELECTRICAL CHARACTERISTICS
T
1.5
NSDEMP11XV6T1, NSDEMP11XV6T5
1.0
0.8
A
(T
= 25°C
0
A
t
rr
Symbol
= 25°C)
(Note 3)
T
A
V
C
V
I
R
= −40°C
R
F
D
1.0
R
Figure 3. Diode Capacitance
L
http://onsemi.com
2
V
R
I
, REVERSE VOLTAGE (VOLTS)
F
= 5.0 mA, V
1.2
2
0.001
V
V
0.01
4
R
1.0
0.1
R
10
R
= 6.0 V, f = 1.0 MHz
0
= 6.0 V, R
I
INPUT PULSE
I
t
F
Condition
R
r
V
= 100 mA
R
10%
= 100 mA
t
t
90%
p
r
= 70 V
= 0.35 ns
= 2 ms
6
L
t
p
10
= 100 W, I
Figure 2. Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
T
T
T
T
rr
A
A
T
A
A
20
= 150°C
= 125°C
A
= 0.1 I
= 55°C
= 25°C
t
= 85°C
8
R
30
I
F
OUTPUT PULSE
Min
−
−
0
−
−
I
V
R
F
R
L
= 5.0 mA
= 100 W
= 6 V
Max
0.1
1.2
3.5
4.0
40
t
−
rr
I
rr
= 0.1 I
mAdc
Unit
Vdc
Vdc
R
pF
ns
t
50