BAS40-06LT1G ON Semiconductor, BAS40-06LT1G Datasheet - Page 3

• Manufacturer Part Number: BAS40-06LT1G
• Description: DIODE SCHOTTKY 40V CA SOT23
• Manufacturer: ON Semiconductor

Specifications of BAS40-06LT1G

• Voltage - Forward (vf) (max) @ If: 1V @ 40mA
• Current - Reverse Leakage @ Vr: 1µA @ 25V
• Current - Average Rectified (io) (per Diode): 120mA (DC)
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.12 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Forward Voltage Drop: 1 V @ 0.04 A
• Maximum Reverse Leakage Current: 1 uA @ 25 V
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BAS40-06LT1GOSTR

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A
A1
E
1
3
D
e
2
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
b
H
E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SEE VIEW C
0.037
0.95
0.035
0.9
0.031
N. American Technical Support: 800−282−9855 Toll Free
Europe, Middle East and Africa Technical Support:
Japan Customer Focus Center
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
VIEW C
0.8
USA/Canada
Phone: [phone]
Phone: 81−3−5773−3850
L1
L
http://onsemi.com
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
q
0.25
c
3
SCALE 10:1
0.037
0.95
NOTES:
STYLE 12:
1. DIMENSIONING AND TOLERANCING PER
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
4. 318−01 THRU −07 AND −09 OBSOLETE,
ANSI Y14.5M, 1982.
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
NEW STANDARD 318−08.
PIN 1. CATHODE
0.079
DIM
A1
H
L1
A
D
E
2.0
b
c
e
L
E
inches
2. CATHODE
3. ANODE
mm
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
MILLIMETERS
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loca
Sales Representative
MAX
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MIN
BAS40−06LT1/D
INCHES
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
NOM
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MAX