HN2D02FUTW1T1G ON Semiconductor, HN2D02FUTW1T1G Datasheet - Page 2

• Manufacturer Part Number: HN2D02FUTW1T1G
• Description: DIODE SWITCH 80V 100MA SC88
• Manufacturer: ON Semiconductor

Specifications of HN2D02FUTW1T1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 75V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 3ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 3 Independent
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Ultra Fast Recovery Rectifier
• Configuration: Triple Parallel
• Reverse Voltage: 80 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 3 ns
• Forward Continuous Current: 0.1 A
• Max Surge Current: 1 A
• Reverse Current Ir: 0.1 uA
• Power Dissipation: 0.3 W
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: HN2D02FUTW1T1GOSTR

2. t
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time (Figure 1)
100
rr
RECOVERY TIME EQUIVALENT TEST CIRCUIT
1.0
0.1
10
Test Circuit
0.2
0.4
T
A
= 85°C
Figure 2. Forward Voltage
V
Characteristic
F
, FORWARD VOLTAGE (VOLTS)
0.6
A
0.68
0.64
0.60
0.56
0.52
T
A
Figure 1. Reverse Recovery Time Equivalent Test Circuit
= - 40°C
0
0.8
(T
T
A
A
= 25°C)
= 25°C
1.0
2
V
R
Figure 4. Capacitance
R
, REVERSE VOLTAGE (VOLTS)
L
http://onsemi.com
t
rr
Symbol
1.2
(Note 2)
V
C
V
I
R
R
D
F
4
2
0.001
0.01
1.0
0.1
10
V
0
R
I
R
F
V
L
= 10 mA, V
6
R
= 100 W, I
INPUT PULSE
= 0, f = 1.0 MHz
t
I
I
r
Condition
F
R
V
V
10%
= 100 mA
R
R
= 100 mA
90%
t
t
p
r
10
= 30 V
= 80 V
= 0.35 ns
= 2 ms
Figure 3. Leakage Current
rr
R
t
V
p
R
= 0.1 I
= 6.0 V,
, REVERSE VOLTAGE (VOLTS)
8
T
T
T
T
T
R
20
A
A
A
A
A
= 150°C
= 125°C
= 85°C
= 55°C
= 25°C
t
Min
80
−
−
−
−
−
30
OUTPUT PULSE
I
F
Max
0.1
0.5
1.2
2.0
3.0
−
I
V
R
F
40
R
L
= 10 mA
= 100 W
= 6 V
t
mAdc
rr
Unit
I
Vdc
Vdc
rr
pF
ns
= 0.1 I
50
R