BAV99WT1 ON Semiconductor, BAV99WT1 Datasheet - Page 2
![DIODE SWITCH SS DUAL 70V SOT323](/photos/5/30/53065/sc___70_sot___323__419___04_sml.jpg)
BAV99WT1
Manufacturer Part Number
BAV99WT1
Description
DIODE SWITCH SS DUAL 70V SOT323
Manufacturer
ON Semiconductor
Datasheet
1.BAV99WT1G.pdf
(4 pages)
Specifications of BAV99WT1
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BAV99WT1OSCT
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1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
+10 V
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Total Device Dissipation FR−5 Board, (Note 1) T
Thermal Resistance Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) T
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (V
Diode Capacitance
Forward Voltage
Reverse Recovery Time (I
Forward Recovery Voltage (I
Derate above 25 C
Derate above 25 C
(V
50 W OUTPUT
GENERATOR
R
PULSE
= 0, f = 1.0 MHz)
820 W
0.1 mF
2 k
(I
(I
(I
(I
100 mH
F
F
F
F
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
Characteristic
F
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
= I
F
R
I
(BR)
= 10 mA, t
F
= 10 mAdc, i
(b) Input pulse is adjusted so I
(c) t
Characteristic
= 100 mA)
DUT
(V
(V
p
R
R
R
Figure 1. Recovery Time Equivalent Test Circuit
» t
= 70 Vdc)
= 25 Vdc, T
= 70 Vdc, T
r
(T
rr
= 20 ns)
A
R(REC)
= 25 C unless otherwise noted) (Each Diode)
0.1 mF
OSCILLOSCOPE
A
BAV99WT1, BAV99RWT1
= 25 C
50 W INPUT
SAMPLING
= 1.0 mAdc) (Figure 1) R
J
J
= 150 C)
= 150 C)
A
= 25 C
http://onsemi.com
R(peak)
2
V
R
is equal to 10 mA.
Symbol
T
R
R
J
t
P
P
, T
r
qJA
qJA
L
INPUT SIGNAL
D
D
stg
= 100 W
10%
90%
t
p
Symbol
V
t
V
C
V
(BR)
I
t
R
FR
rr
D
F
−65 to +150
F
) of 10 mA.
Max
200
625
300
417
1.6
2.4
I
I
R
F
Min
70
−
−
−
−
−
−
−
−
−
−
(I
F
= I
at i
OUTPUT PULSE
R
1000
1250
Max
1.75
715
855
2.5
1.5
6.0
30
50
= 10 mA; measured
R(REC)
t
−
rr
i
R(REC)
mW/ C
mW/ C
= 1 mA)
Unit
mW
mW
C/W
C/W
C
mVdc
= 1 mA
mAdc
Unit
Vdc
pF
ns
V
t