MBR20H150CTG ON Semiconductor, MBR20H150CTG Datasheet - Page 2

• Manufacturer Part Number: MBR20H150CTG
• Description: DIODE SCHTTKY DUAL H-SER TO220FP
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR20H150CTG

• Voltage - Forward (vf) (max) @ If: 870mV @ 10A
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Switching Diodes
• Peak Reverse Voltage: 150 V
• Forward Continuous Current: 20 A
• Max Surge Current: 180 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.87 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 20 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 20 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
DEVICE ORDERING INFORMATION
Specification Brochure, BRD8011/D.
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
ESD Ratings:
Maximum Thermal Resistance
(MBR20H150CT)
(MBRF20H150CT)
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
MBRF20H150CTG
MBR20H150CTG
R
Device Order Number
) T
C
= 134°C
(Per Diode Leg)
Rating
R
)
(Rated DC Voltage, T
(Rated DC Voltage, T
MBRF20H150CTG, MBR20H150CTG
Rating
Rating
(Per Diode Leg)
Human Body Model = 3B
(I
- Junction-to-Ambient
(I
(I
F
(I
F
F
= 10 A, T
- Junction-to-Case
- Junction-to-Case
Machine Model = C
F
= 5 A, T
= 10 A, T
= 5 A, T
http://onsemi.com
(Per Device)
C
C
C
Package Type
C
C
C
(Per Leg)
= 125°C)
= 125°C)
= 125°C)
TO-220FP
(Pb-Free)
(Pb-Free)
= 25°C)
= 25°C)
= 25°C)
TO-220
2
Symbol
v
i
R
F
Symbol
D
Symbol
V
V
I
/dT
dv/dt
R
R
R
I
0.72
0.57
0.87
0.65
F(AV)
T
Typ
FSM
RWM
RRM
V
T
qJC
qJC
stg
qJA
R
J
J
< 1/R
qJA
50 Units / Rail
50 Units / Rail
Shipping
.
-20 to +150
-65 to +150
10,000
> 8000
Value
Value
> 400
Max
0.60
0.68
150
180
2.0
2.5
10
20
45
50
30
†
°C/W
Unit
V/ms
Unit
Unit
mA
mA
°C
°C
V
A
A
V
V