MBRD660CTG ON Semiconductor, MBRD660CTG Datasheet - Page 5

• Manufacturer Part Number: MBRD660CTG
• Description: DIODE SCHOTTKY 60V 3A DPAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRD660CTG

• Voltage - Forward (vf) (max) @ If: 700mV @ 3A
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Other names: MBRD660CTG; MBRD660CTGOS

8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
80
Figure 4. Current Derating, Case, Per Leg
90
100
T
C
, CASE TEMPERATURE (°C)
SQUARE
110
WAVE
WAVE
SINE
OR
120
100
1 K
10
0
RATED VOLTAGE APPLIED
130
Figure 6. Typical Capacitance, Per Leg
10
dc
R
140
qJC
T
J
= 150°C
= 6°C/W
V
R
20
, REVERSE VOLTAGE (VOLTS)
150
http://onsemi.com
30
160
5
40
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
T
0
J
= 25°C
50
V
Figure 5. Current Derating, Ambient, Per Leg
V
R
R
= 60 V
= 25 V
20
60
T
J
= 150°C
40
T
A
, AMBIENT TEMPERATURE (°C)
70
60
80
SURFACE MOUNTED ON MIN.
PAD SIZE RECOMMENDED
100
R
qJA
= 80°C/W
120
dc
SQUARE WAVE
SINE WAVE
OR
140
160