ISL9K860P3 Fairchild Semiconductor, ISL9K860P3 Datasheet - Page 4

• Manufacturer Part Number: ISL9K860P3
• Description: DIODE DUAL 600V 8A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9K860P3

• Voltage - Forward (vf) (max) @ If: 2.4V @ 8A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 30ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 7. Reverse Recovery Softness Factor vs dI
Figure 9. Junction Capacitance vs Reverse Voltage
1200
1000
800
600
400
200
6
5
4
3
2
1
0
100
0.01
1.0
0.1
V
10
R
0.1
200
-5
= 390V, T
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
dI
F
300
/dt, CURRENT RATE OF CHANGE (A/µs)
SINGLE PULSE
J
I
I
F
F
= 125°C
= 16A
= 4A
V
400
R
, REVERSE VOLTAGE (V)
Figure 11. Normalized Maximum Transient Thermal Impedance
1
10
500
-4
600
I
F
= 8A
700
10
(Continued)
800
10
-3
900
t, RECTANGULAR PULSE DURATION (s)
1000
100
F
/dt
10
-2
Figure 8. Reverse Recovery Charge vs dI
350
300
250
200
150
100
10
50
8
6
4
2
0
140
100
Figure 10. DC Current Derating Curve
V
R
= 390V, T
200
145
dI
F
300
10
/dt, CURRENT RATE OF CHANGE (A/µs)
J
-1
150
T
= 125°C
C
, CASE TEMPERATURE (
NOTES:
DUTY FACTOR: D = t
PEAK T
400
I
I
I
F
F
F
= 16A
= 8A
= 4A
155
J
500
= P
DM
600
x Z
160
10
P
DM
JA
0
1
700
/t
x R
2
165
o
JA
C)
t
1
800
+ T
t
2
A
ISL9K860P3 Rev. C
170
900
F
/dt
10
1000
1
175