ISL9K18120G3 Fairchild Semiconductor, ISL9K18120G3 Datasheet
ISL9K18120G3
Manufacturer Part Number
ISL9K18120G3
Description
DIODE DUAL 1200V 18A TO-247
Manufacturer
Fairchild Semiconductor
Series
Stealth™r
Datasheet
1.ISL9K18120G3.pdf
(6 pages)
Specifications of ISL9K18120G3
Voltage - Forward (vf) (max) @ If
3.3V @ 18A
Current - Reverse Leakage @ Vr
100µA @ 1200V
Current - Average Rectified (io) (per Diode)
18A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Reverse Recovery Time (trr)
70ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ISL9K18120G3
Manufacturer:
INFINEON
Quantity:
5 000
©2002 Fairchild Semiconductor Corporation
ISL9K18120G3
18A, 1200V Stealth™ Dual Diode
General Description
The ISL9K18120G3 is a Stealth™ dual diode optimized for low
loss performance in high frequency hard switched applications.
The Stealth™ family exhibits low reverse recovery current
(I
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49414
Device Maximum Ratings (
Package
RM(REC)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
T
Symbol
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
V
J
V
I
T
E
I
I
F(AV)
, T
FRM
RWM
FSM
RRM
V
P
T
PKG
AVL
R
D
L
) and exceptionally soft recovery under typical
STG
(BOTTOM SIDE
CATHODE
METAL)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
JEDEC STYLE TO-247
RM(REC)
and short t
.
a
phase reduce loss
per leg)
ANODE 2
Parameter
CATHODE
C
T
ANODE 1
= 92
C
= 25°C unless otherwise noted
o
C)
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
-55 to 150
Ratings
Symbol
A1
1200
1200
1200
200
125
300
260
18
36
36
20
K
May 2002
ISL9K18120G3 Rev. A
b
A2
/ t
rr
Units
< 45ns
a
mJ
°C
°C
°C
W
V
V
V
A
A
A
A
> 5.0
o
C
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ISL9K18120G3 Summary of contents
Page 1
... ISL9K18120G3 18A, 1200V Stealth™ Dual Diode General Description The ISL9K18120G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (I ) and exceptionally soft recovery under typical RM(REC) operating conditions ...
Page 2
... 780V 125° TO-247 Tape Width Quantity N/A 30 Min Typ Max T = 25° 100 125° 1 25°C - 2.7 3 125°C - 2.5 3 30V - 30V - 300 - - 6 950 - - 400 - - 235 - - 5 2 370 - - - 1 ISL9K18120G3 Rev. A Units µ µ µC A/µs °C/W °C/W ...
Page 3
... REVERSE VOLTAGE (kV 780V 125 30A, 15A, 7. 30A, 15A, 7. 400 600 800 1000 1200 dI /dt, CURRENT RATE OF CHANGE (A/µs) F and t Curves 780V 125 400 600 800 1000 1200 dI /dt, CURRENT RATE OF CHANGE (A/µ /dt F ISL9K18120G3 Rev. A 1.1 1 1400 I = 30A 15A F = 7.5A F 1400 ...
Page 4
... CURRENT RATE OF CHANGE (A/µ 18A 780V, dI /dt = 300A/µ RM(REC 100 125 CASE TEMPERATURE ( Case Temperature 140 150 C) ISL9K18120G3 Rev 30A 15A 7.5A F 1400 /dt F 400 380 360 340 320 300 280 260 240 150 ...
Page 5
... IGBT (BV > DUT CES R(AVL) CURRENT SENSE Q 1 DUT Figure 15. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation - RECTANGULAR PULSE DURATION ( CURRENT 0 SENSE + Figure 14 Figure 16. Avalanche Current and Voltage NOTES: DUTY FACTOR PEAK 0. Waveforms and Definitions rr V AVL Waveforms ISL9K18120G3 Rev ...
Page 6
CROSSVOLT â â â â Rev. H5 ...