ISL9K30120G3 Fairchild Semiconductor, ISL9K30120G3 Datasheet - Page 4

• Manufacturer Part Number: ISL9K30120G3
• Description: DIODE DUAL 1200V 30A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: Stealth™r

Specifications of ISL9K30120G3

• Voltage - Forward (vf) (max) @ If: 3.3V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 1200V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Reverse Recovery Time (trr): 100ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves (per leg)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 7. Reverse Recovery Softness Factor vs
1600
1400
1200
1000
800
600
400
200
9
8
7
6
5
4
3
0
200
0.03
0.1
dI
400
F
/dt, CURRENT RATE OF CHANGE (A/µs)
V
R
, REVERSE VOLTAGE (V)
600
dI
F
I
I
1
I
F
F
F
/dt
= 60A
= 30A
= 15A
800
35
30
25
20
15
10
Figure 11.
5
0
V
60
R
= 780V, T
10
70
1000
C
= 125
f = 1MH
80
DC CURRENT DERATING CURVE
T
C
o
, CASE TEMPERATURE (
C
1200
Z
90
100
(Continued)
100
Figure 10. Maximum Reverse Recovery Current
110
Figure 8. Reverse Recovery Charge vs dI
-14
-16
-18
-20
-22
6.0
5.6
5.0
4.5
4.0
3.5
3.0
2.5
2.0
200
25
120
V
o
R
C)
= 780V, T
and t
130
dI
I
50
F
400
F
= 30A, V
/dt, CURRENT RATE OF CHANGE (A/µs)
T
I
RM(REC)
t
C
140
RR
C
rr
, CASE TEMPERATURE (
= 125
vs Case Temperature
R
150
75
o
= 780V, dI
C
600
I
I
I
F
F
F
= 60A
= 30A
= 15A
F
100
/dt = 500A/µs
800
o
C)
125
1000
ISL9K30120G3 Rev. A
150
F
400
350
300
250
200
/dt
1200