FFP12UP20DNTU Fairchild Semiconductor, FFP12UP20DNTU Datasheet

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FFP12UP20DNTU

Manufacturer Part Number
FFP12UP20DNTU
Description
DIODE PWR ULT FAST 200V TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FFP12UP20DNTU

Voltage - Forward (vf) (max) @ If
1.15V @ 6A
Current - Reverse Leakage @ Vr
100µA @ 200V
Current - Average Rectified (io) (per Diode)
6A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2006 Fairchild Semiconductor Corporation
FFP12UP20DN Rev. A
FFP12UP20DN
Ultrafast Recovery Power Rectifier
Features
• Ultrafast with Soft Recovery : < 35ns (@I
• High Reverse Voltage : V
• Enhanced Avalanche Energy Rated
• Planar Construction
Applications
• Output Rectifiers
• Switching Mode Power Supply
• Free-wheeling Diode
• Power Switching Circuits
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
V
I
I
T
R
Device Marking
F(AV)
FSM
J,
RRM
RWM
R
θJC
Symbol
T
Symbol
F12UP20DN
STG
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case
1.Anode 2.Cathode 3.Anode
1
FFP12UP20DNTU
RRM
Device
= 200V
TO-220
F
Parameter
Parameter
= 6A)
(per diode) T
Package
TO-220
C
= 25°C unless otherwise noted
@ T
1
C
= 125°C
Reel Size
-
1
1. Anode 2. Cathode 3. Anode
Tape Width
- 65 to +150
Max
Value
3.5
200
200
200
60
2
6
-
3
February 2006
Quantity
www.fairchildsemi.com
Units
°C/W
Units
50
°C
V
V
V
A
A

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FFP12UP20DNTU Summary of contents

Page 1

... Operating Junction and Storage Temperature J, STG Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device F12UP20DN FFP12UP20DNTU ©2006 Fairchild Semiconductor Corporation FFP12UP20DN Rev 6A) F TO-220 (per diode 25°C unless otherwise noted C Parameter @ T = 125°C ...

Page 2

Electrical Characteristics Symbol 200V 200V =1A, di/dt = 100A/µ =6A, di/dt = 200A/µs, V ...

Page 3

Typical Performance Characteristics Figure 1. Typical Forward Voltage Drop 100 125 0.1 0.4 0.6 0.8 1.0 FORWARD VOLTAGE, V Figure 3. Typical Junction Capacitance 140 ...

Page 4

Mechanical Dimensions TO - 220 Dimensions in Millimeters ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ FPS™ Bottomless™ FRFET™ Build it Now™ GlobalOptoisolator™ ...

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