BYW99P-200 STMicroelectronics, BYW99P-200 Datasheet - Page 4

• Manufacturer Part Number: BYW99P-200
• Description: DIODE FAST REC 200V 15A SOT-93
• Manufacturer: STMicroelectronics

Specifications of BYW99P-200

• Voltage - Forward (vf) (max) @ If: 850mV @ 12A
• Current - Reverse Leakage @ Vr: 20µA @ 200V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 40ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: SOT-93-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2691-5

Fig.7
temperature.
( = 0.5) (SOT93, TO247)
16
15
14
13
12
11
10
Fig.9 : Junction capacitance versus reverse
voltage applied (Typical values).
20 0
1 90
1 80
1 70
1 60
1 50
1 40
1 30
1 20
11 0
1 00
BYW99P/PI/W
Fig.11 : Peak reverse current versus dIF/dt.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4/6
9
8
7
6
5
4
3
2
1
0
0
I
1
F(av)(A)
1
C(pF)
IRM(A)
=0.5
90%CONFIDENCE
=tp/T
IF=IF(av)
20
:
2 0
Average
T
40
Rth(j-a)=15
tp
60
Tamb( C)
1 0
current
VR(V)
o
Rth(j-a)=Rth(j-c)
80
1 0
C/W
o
F=1Mhz Tj=25 C
dIF/dt(A/us)
100
versus
Tj=100 C
Tj=25 C
120
O
O
1 00
140
o
ambient
200
1 00
160
Fig.8
temperature.
( = 0.5) (TOP3I)
16
15
14
13
12
11
10
Fig.10 : Recovery charges versus dI
60
55
50
45
40
35
30
25
20
1 5
1 0
Fig.12 : Dynamic parameters versus junction
temperature.
1.50
1.25
1.00
0.75
0.50
0.25
0.00
9
8
7
6
5
4
3
2
1
0
5
0
1
0
I
QRR(nC)
F(av)(A)
0
90%CONFIDENCE
QRR;IRM[Tj]/QRR;IRM[Tj=125 C]
IF=IF(av)
=0.5
=tp/T
20
:
25
Average
T
40
Rth(j-a)=15
tp
50
60
Tj( C)
Tamb( C)
IRM
o
current
Rth(j-a)=Rth(j-c)
dIF/dt(A/us)
o
1 0
80
C/W
75
o
QRR
Tj=100 C
100
100
versus
o
120
O
Tj=25 C
F
/dt.
125
140
O
ambient
1 00
160
150