BYW51-200 STMicroelectronics, BYW51-200 Datasheet

DIODE FAST REC 200V 10A TO-220AB

BYW51-200

Manufacturer Part Number
BYW51-200
Description
DIODE FAST REC 200V 10A TO-220AB
Manufacturer
STMicroelectronics
Datasheet

Specifications of BYW51-200

Voltage - Forward (vf) (max) @ If
850mV @ 8A
Current - Reverse Leakage @ Vr
15µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V at 16 A
Recovery Time
35 ns
Forward Continuous Current
20 A
Max Surge Current
100 A
Reverse Current Ir
15 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2693-5

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Company
Part Number
Manufacturer
Quantity
Price
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BYW51-200
Manufacturer:
ST
Quantity:
5 000
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NXP
Quantity:
10 000
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Manufacturer:
ST
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ST
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20 000
Part Number:
BYW51-200G
Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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MAIN PRODUCT CHARACTERISTICS
ABSOLUTE RATINGS (limiting values, per diode)
August 2002 - Ed: 3E
FEATURES AND BENEFITS
DESCRIPTION
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged
TO-220FP, D
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
Symbol
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
INSULATED PACKAGES (ISOWATT220AB /
TO-220FP) :
Insulation voltage = 2000 V DC
Capacitance = 12 pF
I
V
F(RMS)
I
Tstg
I
F(AV)
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FSM
RRM
Tj
trr (max)
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
in
= 0.5
2
PAK or I
TO-220AB,
2
PAK, this device is
ISOWATT220AB,
2 x 10 A
0.85 V
150 °C
200 V
25 ns
TO-220FPAB
TO-220AB / D
I
ISOWATT220AB
2
PAK
Parameter
2
PAK
Tc=120°C Per diode
Tc=95 C
Tc=85°C
tp=10ms sinusoidal
BYW51/F/G/FP/R-200
BYW51FP-200
BYW51G-200
BYW51R-200
TO-220FPAB
K
D
I
2
2
PAK
PAK
A1
Per diode
Per device
Per device
Per diode
Per device
A1
A2
A1
K
K
A2
A2
ISOWATT220AB
- 65 to + 150
BYW51F-200
BYW51-200
TO-220AB
Value
A1
A2
200
100
20
10
20
10
20
10
20
150
A1
K
A1
K
K
Unit
°C
A2
V
A
A
A
A2
C
1/9

Related parts for BYW51-200

BYW51-200 Summary of contents

Page 1

... TO-220FPAB BYW51FP-200 K BYW51G-200 ISOWATT220AB, BYW51R-200 Parameter 2 TO-220AB / D PAK Tc=120°C Per diode 2 I PAK ISOWATT220AB Tc=95 C Tc=85°C TO-220FPAB tp=10ms sinusoidal TO-220AB BYW51-200 PAK ISOWATT220AB BYW51F-200 PAK Value 200 20 10 Per device 20 Per diode 10 Per device 20 10 Per diode 20 Per device ...

Page 2

... BYW51/F/G/FP/R-200 THERMAL RESISTANCES Symbol R Junction to case th (j-c) R Coupling th (c) When diodes 1 and 2 are used simultaneously : Tc (diode 1) = P(diode th(j-c) STATIC ELECTRICAL CHARACTERISTICS (Per diode) Symbol Parameter I * Reverse leakage current R V Forward voltage drop F ** Pulse test :* ms, < 380 s, < evaluate the conduction losses use the following equation : ...

Page 3

... Fig. 4-2: Non repetitive surge peak forward current versus overload duration (ISOWATT220AB). IM( Tc=25°C 40 Tc=75° Tc=100° 1E-3 1E-1 1E+0 BYW51/F/G/FP/R-200 P=10W P=15W 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Rth(j-a)=Rth(j-c) ISOWATT220AB TO-220FP Rth(j-a)=15°C/W T Tamb(° 100 t t(s) =0 ...

Page 4

... BYW51/F/G/FP/R-200 Fig. 4-3: Non repetitive surge peak forward current versus overload duration (TO-220FPAB). IM( t(s) t =0.5 0 1E-3 1E-2 Fig. 5-2: Relative variation of thermal impedance junction to case versus (ISOWATT220AB, TO-220FPAB). K=[Zth(j-c)/Rth(j-c)] 1.0 = 0.5 = 0.2 = 0.1 Single pulse t(s) 0.1 1E-2 1E-1 Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode) ...

Page 5

... FR4, copper thickness PAK) . Rth(j-a) (°C/ S(Cu) (cm² /dt Fig. 10: Dynamic parameters versus junction F temperature. Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C] 1.25 1.00 0.75 0.50 0.25 200 500 BYW51/F/G/FP/R-200 IRM Qrr Tj(° 100 125 150 5/9 ...

Page 6

... 6/9 REF Dia. REF BYW51/F/G/FP/R-200 DIMENSIONS Millimeters Inches Min. Max. Min. A 4.30 4.60 0.169 C 1.22 1.32 0.048 D 2.40 2.72 0.094 E 0.33 0.70 0.013 F 0.61 0.93 0.024 1.14 1.70 0.045 1.14 1.70 0.045 G 4.95 5.15 0.195 2.40 2.70 0.094 10.00 10.40 0.394 L2 16 ...

Page 7

... BYW51/F/G/FP/R-200 PACKAGE MECHANICAL DATA 2 D PAK FLAT ZONE NO LESS THAN 2mm FOOT PRINT (in millimeters PAK 16.90 10.30 3.70 8.90 REF 5.08 1.30 DIMENSIONS Millimeters Inches Min. Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 ...

Page 8

... PACKAGE MECHANICAL DATA ISOWATT220AB (JEDEC compatible) 8/9 REF Dia Dia. REF. Diam BYW51/F/G/FP/R-200 DIMENSIONS Millimeters Inches Min. Max. Min. 4.4 4.6 0.173 2.5 2.7 0.098 2.5 2.75 0.098 0.45 0.70 0.018 0.75 1 0.030 1.15 1.70 0.045 1.15 1.70 0.045 4.95 5.20 ...

Page 9

... Ordering code Marking BYW51-200 BYW51-200 BYW51F-200 BYW51F-200 BYW51G-200 BYW51G-200 BYW51FP-200 BYW51FP-200 BYW51R-200 BYW51R-200 Recommended torque value (TO-220AB): 0.8 N.m. Maximum torque value (TO-220AB): 1.0 N.m. Recommended torque value (ISOWATT220AB / TO-220FPAB): 0.55 N.m. Maximum torque value (ISOWATT220AB / TO-220FPAB): 0.70 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable ...

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