BYW51G-200 STMicroelectronics, BYW51G-200 Datasheet - Page 5
![DIODE FAST REC 10A 200V D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
BYW51G-200
Manufacturer Part Number
BYW51G-200
Description
DIODE FAST REC 10A 200V D2PAK
Manufacturer
STMicroelectronics
Datasheet
1.BYW51-200.pdf
(9 pages)
Specifications of BYW51G-200
Voltage - Forward (vf) (max) @ If
850mV @ 8A
Current - Reverse Leakage @ Vr
15µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.15 V at 16 A
Recovery Time
35 ns
Forward Continuous Current
20 A
Max Surge Current
100 A
Reverse Current Ir
15 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Fig. 9: Peak reverse recovery current versus dI
(per diode).
50
10
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 m)
(D
80
70
60
50
40
30
20
10
1
0
10
0
2
IRM(A)
Rth(j-a) (°C/W)
PAK) .
90% confidence
Tj=125°C
IF=IF(av)
5
20
10
15
50
dIF/dt(A/µs)
S(Cu) (cm²)
20
100
25
200
30
35
F
500
/dt
40
Fig. 10: Dynamic parameters versus junction
temperature.
1.25
1.00
0.75
0.50
0.25
0
Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C]
25
50
IRM
Qrr
Tj(°C)
BYW51/F/G/FP/R-200
75
100
125
150
5/9