STPR1020CB STMicroelectronics, STPR1020CB Datasheet - Page 4

• Manufacturer Part Number: STPR1020CB
• Description: DIODE ULTRA FAST REC DPAK
• Manufacturer: STMicroelectronics

Specifications of STPR1020CB

• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 30ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STPR1020CB/CG/CT/CF/CFP/CR
4/10
Fig. 4-3: Non repetitive surge peak forward current
versus overload duration (TO-220FPAB).
50
40
30
20
10
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1.0
0.1
50
40
30
20
10
1E-3
0
1E-2
1
IM(A)
C(pF)
K=[Zth(j-c)/Rth(j-c)]
Single pulse
I
M
= 0.5
= 0.2
= 0.1
=0.5
t
1E-2
1E-1
10
VR(V)
t(s)
t(s)
1E-1
1E+0
=tp/T
100
F=1MHz
Tj=25°C
Tc=100°C
Tc=25°C
T
tp
1E+0
1E+1
200
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration
(D
1.0
0.1
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
50.0
10.0
Fig. 8: Reverse recovery charges versus dIF/dt
(per diode).
200
100
50
20
10
1.0
0.1
1E-3
2
10
K=[Zth(j-c)/Rth(j-c)]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
PAK, DPAK, TO-220AB).
Single pulse
Qrr(nC)
IFM(A)
= 0.1
= 0.5
= 0.2
90% confidence
IF=IF(av)
Tj=125°C
20
1E-2
Tj=125°C
dIF/dt(A/µs)
50
t(s)
VFM(V)
100
Tj=25°C
1E-1
200
=tp/T
T
tp
1E+0
500