MMBD6100LT1 ON Semiconductor, MMBD6100LT1 Datasheet
MMBD6100LT1
Manufacturer Part Number
MMBD6100LT1
Description
DIODE SWITCH DUAL 70V SOT23S
Manufacturer
ON Semiconductor
Datasheet
1.MMBD6100LT1G.pdf
(3 pages)
Specifications of MMBD6100LT1
Voltage - Forward (vf) (max) @ If
1.1V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 50V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MMBD6100LT1OSCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBD6100LT1
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MMBD6100LT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
MMBD6100LT1G
Manufacturer:
MAX
Quantity:
4 464
Part Number:
MMBD6100LT1G
Manufacturer:
ONSEMI
Quantity:
20 000
MMBD6100LT1G
Monolithic Dual
Switching Diode
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MAXIMUM RATINGS (EACH DIODE)
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation, FR−5 Board
(Note 1)
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate
(Note 2)
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Forward Voltage
Reverse Recovery Time
Capacitance
Compliant
T
Derate above 25°C
T
Derate above 25°C
(I
(V
(For each individual diode while the
second diode is unbiased)
(I
(I
(I
(Figure 1)
(V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
A
F
(BR)
F
F
R
R
= 1.0 mAdc)
= I
= 25°C
= 25°C
= 100 mAdc)
= 50 Vdc)
= 0 V)
R
= 100 mAdc)
= 10 mAdc, I
Characteristic
Characteristic
Rating
R(REC)
= 1.0 mAdc)
(T
A
Symbol
I
Symbol
Symbol
FM(surge)
T
V
= 25°C unless otherwise noted)
R
R
J
V
V
P
P
(BR)
, T
I
t
C
I
qJA
qJA
R
rr
F
F
R
D
D
stg
0.55
−55 to +150
Min
0.8
70
−
−
−
Value
Max
200
500
225
556
300
417
1.8
2.4
70
Max
0.1
0.7
1.1
4.0
2.5
−
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
mAdc
Unit
Unit
Unit
Vdc
mW
mW
Vdc
Vdc
pF
°C
ns
MMBD6100LT3G
†For information on tape and reel specifications,
MMBD6100LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Device
(Note: Microdot may be in either location)
CATHODE
5B
M
G
ORDERING INFORMATION
3
MARKING DIAGRAM
http://onsemi.com
1
= Specific Device Code
= Date Code*
= Pb−Free Package
(Pb−Free)
(Pb−Free)
1
Package
SOT−23
SOT−23
CASE 318
STYLE 9
SOT−23
5B M G
Publication Order Number:
2
G
3
10,000/Tape & Reel
ANODE
ANODE
3000/Tape & Reel
MMBD6100LT1/D
1
2
Shipping
†
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MMBD6100LT1 Summary of contents
Page 1
... MMBD6100LT1G SOT−23 3000/Tape & Reel (Pb−Free) MMBD6100LT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MMBD6100LT1/D † ...
Page 2
W + 100 mH F 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR Notes 2.0 kW variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...
Page 3
... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBD6100LT1/D ...