BAV99LT1G
Dual Series
Switching Diode
Features
•
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
December, 2010 − Rev. 7
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current (Note 1)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
Total Device Dissipation
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(averaged over any 20 ms period)
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
FR−5 Board (Note 1) T
Derate above 25°C
Alumina Substrate (Note 2)
T
Derate above 25°C
Temperature Range
A
= 25°C
Characteristic
Rating
(Each Diode)
A
= 25°C
I
Symbol
Symbol
FM(surge)
T
V
I
R
R
I
I
J
F(AV)
FRM
FSM
V
P
P
RRM
, T
I
qJA
qJA
F
R
D
D
stg
−65 to
Value
+150
Max
215
500
715
450
225
556
300
417
2.0
1.0
0.5
1.8
2.4
70
70
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
mW
mW
mA
mA
°C
V
A
BAV99LT1G
†For information on tape and reel specifications,
BAV99LT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ANODE
1
ORDERING INFORMATION
1
A7 = Device Code
M
G
MARKING DIAGRAM
2
http://onsemi.com
CATHODE/ANODE
(Pb−Free)
(Pb−Free)
1
Package
= Date Code*
= Pb−Free Package
SOT−23
SOT−23
3
A7 MG
3
G
Publication Order Number:
CASE 318
STYLE 11
10,000/Tape & Reel
3000/Tape & Reel
SOT−23
CATHODE
Shipping
2
BAV99LT1/D
†