BAS40-04LT1G ON Semiconductor, BAS40-04LT1G Datasheet - Page 8

DIODE SCHOTTKY DUAL 40V SOT23

BAS40-04LT1G

Manufacturer Part Number
BAS40-04LT1G
Description
DIODE SCHOTTKY DUAL 40V SOT23
Manufacturer
ON Semiconductor
Datasheets

Specifications of BAS40-04LT1G

Voltage - Forward (vf) (max) @ If
1V @ 40mA
Current - Reverse Leakage @ Vr
1µA @ 25V
Current - Average Rectified (io) (per Diode)
120mA (DC)
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.12 A
Max Surge Current
600 A
Configuration
Dual Series
Forward Voltage Drop
1 V @ 0.04 A
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Capacitance, Junction
5 pF
Current, Forward
120 mA
Current, Surge
600 mA
Package Type
SOT-23 (TO-236AB)
Power Dissipation
225 mW
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-55 to +150 °C
Voltage, Forward
1 V
Voltage, Reverse
40 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BAS40-04LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS40-04LT1G
Manufacturer:
Diptronics
Quantity:
60 000
Part Number:
BAS40-04LT1G
Manufacturer:
ON
Quantity:
33 000
Part Number:
BAS40-04LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAS40-04LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BAS40-04LT1G
Quantity:
18 000
Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
Page 8 of 36

Related parts for BAS40-04LT1G