BAV99LT1G ON Semiconductor, BAV99LT1G Datasheet - Page 2
BAV99LT1G
Manufacturer Part Number
BAV99LT1G
Description
DIODE SWITCH SS DUAL 70V SOT23
Manufacturer
ON Semiconductor
Specifications of BAV99LT1G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
215mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Capacitance, Junction
1.5 pF
Configuration
Dual
Current, Forward
215 mA
Current, Surge
500 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Rectifier
Speed, Switching
Switching
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-60 to +150 °C
Time, Recovery
6 ns
Voltage, Forward
1250 mV
Voltage, Reverse
70 V
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
70V
Avg. Forward Curr (max)
0.715A
Rev Curr
2.5uA
Peak Non-repetitive Surge Current (max)
2A
Forward Voltage
1.25V
Operating Temp Range
-65C to 150C
Rev Recov Time
6ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAV99LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAV99LT1G
Manufacturer:
ON
Quantity:
12 000
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Part Number:
BAV99LT1G
Manufacturer:
ON
Quantity:
2 450
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Part Number:
BAV99LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
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Manufacturer:
ON
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30 000
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BAV99LT1G
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ON/安森美
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20 000
Part Number:
BAV99LT1G / BAV99
Manufacturer:
ON/安森美
Quantity:
20 000
OFF CHARACTERISTICS
Reverse Breakdown Voltage,
Reverse Voltage Leakage Current,
Diode Capacitance,
Forward Voltage,
Reverse Recovery Time,
Forward Recovery Voltage,
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(T
(I
(BR)
F
F
F
F
F
F
R
R
R
R
A
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
= I
= 10 mA, t
= 25°C unless otherwise noted) (Each Diode)
= 70 Vdc)
= 25 Vdc, T
= 70 Vdc, T
= 0, f = 1.0 MHz)
Characteristic
= 100 mA)
R
= 10 mAdc, i
r
= 20 ns)
J
J
= 150°C)
= 150°C)
R(REC)
= 1.0 mAdc) R
BAV99LT1
2
L
= 100 W
Symbol
V
V
C
V
(BR)
I
t
FR
R
rr
D
F
Min
70
−
−
−
−
−
−
−
−
−
−
1000
1250
Max
1.75
715
855
2.5
1.5
6.0
30
50
−
mVdc
mAdc
Unit
Vdc
pF
ns
V