MURH840CTG ON Semiconductor, MURH840CTG Datasheet - Page 2

DIODE ULT FAST 400V 4A TO-220AB

MURH840CTG

Manufacturer Part Number
MURH840CTG
Description
DIODE ULT FAST 400V 4A TO-220AB
Manufacturer
ON Semiconductor
Series
MEGAHERTZ™r
Datasheet

Specifications of MURH840CTG

Voltage - Forward (vf) (max) @ If
2.2V @ 4A
Current - Reverse Leakage @ Vr
10µA @ 400V
Current - Average Rectified (io) (per Diode)
4A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
28ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
400 V
Forward Voltage Drop
2.2 V @ 4 A
Recovery Time
28 ns
Forward Continuous Current
8 A
Max Surge Current
100 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MURH840CTGOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MURH840CTG
Quantity:
3 000
Part Number:
MURH840CTG
Manufacturer:
TOSHIBA
Quantity:
6 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(T
Total Device
Peak Repetitive Forward Current per Diode Leg
(Square Wave, 20 kHz, T
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Controlled Avalanche Energy
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 1)
Maximum Instantaneous Reverse Current (Note 1)
Maximum Reverse Recovery Time
100
C
1.0
0.1
10
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
(I
= 155°C) Per Leg
F
F
F
= 4.0 A, T
= 4.0 A, T
= 1.0 A, di/dt = 50 A/ms)
0.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.8
Figure 1. Typical Forward Voltage
j
j
= 150°C)
= 25°C)
150°C
1.2
j
j
= 150°C)
= 25°C)
C
= 149°C)
1.6
Characteristic
Characteristic
175°C
2.0
100°C
Rating
2.4
2.8
http://onsemi.com
25°C
3.2
2
100
1.0
0.1
10
0.6 1.0 1.4 1.8 2.2
Symbol
V
F
v
Conditions
i
t
R
, INSTANTANEOUS FORWARD VOLTAGE (V)
rr
Figure 2. Maximum Forward Voltage
F
Min. Pad
Min. Pad
Min
150°C
2.6 3.0
Symbol
Symbol
Typical
T
W
V
V
I
R
R
I
J
1.12
1.45
F(AV)
300
I
FSM
RWM
V
4.0
RRM
, T
AVAL
FM
qJC
qJA
175°C
R
stg
3.4 3.8 4.2 4.6
−65 to +175
100°C
Value
Max
Max
400
100
500
4.0
8.0
8.0
3.0
1.9
2.2
20
60
10
28
25°C
°C/W
Unit
Unit
Unit
mJ
°C
mA
ns
V
A
A
A
V
5.0

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