MURD620CTT4G ON Semiconductor, MURD620CTT4G Datasheet - Page 2

• Manufacturer Part Number: MURD620CTT4G
• Description: DIODE ULTRA FAST 200V 3A DPAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MURD620CTT4G

• Voltage - Forward (vf) (max) @ If: 1V @ 3A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Current - Average Rectified (io) (per Diode): 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 35 ns
• Forward Continuous Current: 6 A
• Max Surge Current: 50 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 200V
• Avg. Forward Curr (max): 6A
• Rev Curr: 5uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 1.2V
• Operating Temp Range: -65C to 175C
• Package Type: DPAK
• Rev Recov Time: 35ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MURD620CTT4GOS; MURD620CTT4GOS; MURD620CTT4GOSTR

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage Drop (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Maximum Reverse Recovery Time
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
(i
(i
(i
(i
(T
(T
(I
(I
70
50
30
20
10
F
F
F
F
F
F
J
J
= 3 Amps, T
= 3 Amps, T
= 6 Amps, T
= 6 Amps, T
= 1 Amp, di/dt = 50 Amps/ms, V
= 0.5 Amp, i
= 25°C, Rated dc Voltage)
= 125°C, Rated dc Voltage)
0
Figure 1. Typical Forward Voltage (Per Leg)
0.2
v
C
C
C
C
R
F,
= 25°C)
= 125°C)
= 25°C)
= 125°C)
= 1 Amp, I
INSTANTANEOUS VOLTAGE (V)
0.4
150°C
175°C
REC
0.6
= 0.25 A, V
R
0.8
= 30 V, T
(Per Diode)
Rating
R
100°C
T
1.0
J
= 30 V, T
J
= 25°C
= 25°C)
1.2
J
http://onsemi.com
= 25°C)
1.4
2
0.0001
0.001
0.01
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
100
0.1
14
13
12
10
11
10
0
1
0
0
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
V
Figure 3. Average Power Dissipation (Per Leg)
R
Figure 2. Typical Leakage Current* (Per Leg)
.
1.0
20
I
PK
I
F(AV)
/I
AV
2.0
40
= 20
, AVERAGE FORWARD CURRENT (A)
150°C
V
3.0
R
60
, REVERSE VOLTAGE (V)
Symbol
v
i
t
4.0
R
rr
F
10
80
T
100°C
J
25°C
100 120 140 160 180 200
5.0
= 175°C
R
6.0
5.0
is sufficiently below rated
Value
0.96
1.13
250
1.2
35
25
1
5
WAVE
SINE
7.0
T
8.0
J
= 175°C
SQUARE
WAVE
9.0
Unit
mA
ns
V
dc
10