NSR15TW1T2G ON Semiconductor, NSR15TW1T2G Datasheet
NSR15TW1T2G
Manufacturer Part Number
NSR15TW1T2G
Description
DIODE SCHOTTKY TRPL 30MA15V SC88
Manufacturer
ON Semiconductor
Datasheet
1.NSR15TW1T2.pdf
(4 pages)
Specifications of NSR15TW1T2G
Voltage - Forward (vf) (max) @ If
680mV @ 10mA
Current - Reverse Leakage @ Vr
50nA @ 1V
Current - Average Rectified (io) (per Diode)
30mA (DC)
Voltage - Dc Reverse (vr) (max)
15V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
NSR15TW1T2GOS
NSR15TW1T2GOS
NSR15TW1T2GOSTR
NSR15TW1T2GOS
NSR15TW1T2GOSTR
including DC based signal detection and mixing applications.
Features:
Benefits:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
February, 2002 – Rev. 1
Peak Reverse Voltage
Forward Current
Operating and Storage
ESD Rating: Class 1 per Human Body Model
ESD Rating:
Maximum Thermal Resistance –
These diodes are designed for analog and digital applications,
Low Capacitance (<1 pF)
Low V
Low V
Reduced Parasitic Losses
Accurate Signal Measurement
Semiconductor Components Industries, LLC, 2002
Temperature Range
Junction to Ambient
F
FD
(390 mV typical @ 1 mA)
(1 mV typical @ 1 mA)
Class A per Machine Model
Characteristic
Rating
Symbol
Symbol
T
R
J
V
, T
I
qJA
F
R
stg
–65 to
Value
+150
Max
500
15
30
1
Unit
Unit
C/W
mA
V
C
NSR15TW1T2
Device
ORDERING INFORMATION
OZ = Specific Device Code
M
BARRIER DIODES
15 VOLTS, 30 mA
MARKING DIAGRAM
RF SCHOTTKY
= Date Code
http://onsemi.com
6
1
Package
1
CASE 419B
SC–88
STYLE 15
2
SC–88
OZ M
5
2
3
Publication Order Number:
6
3
5
4
4
3000/Tape & Reel
Shipping
NSR15TW1/D
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NSR15TW1T2G Summary of contents
Page 1
These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. Features: Low Capacitance (<1 pF) Low V (390 mV typical @ 1 mA) F Low typical @ 1 mA) FD ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic = 10 mA) Breakdown Voltage (I R Reverse Leakage ( Forward Voltage ( mA) F Forward Voltage ( mA) F Delta mA, All Diodes) F ...
Page 3
I (left scale 0.1 0.3 0.4 0.5 0 FORWARD VOLTAGE (V) F Figure 5. Typical V Match at Mixer Bias Levels Bias = 3 mA 0.1 NSR15TW1 RF IN 0.01 ...
Page 4
... SC–88 (SOT–363) CASE 419B–01 ISSUE JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. ...