MSD6100RLRA ON Semiconductor, MSD6100RLRA Datasheet

MSD6100RLRA

Manufacturer Part Number

MSD6100RLRA

Description

DIODE SW DUAL CC 100V TO-92

Manufacturer

ON Semiconductor

Datasheet

1.MSD6100.pdf (3 pages)

Specifications of MSD6100RLRA

Voltage - Forward (vf) (max) @ If

1.1V @ 100mA

Current - Reverse Leakage @ Vr

5µA @ 100V

Current - Average Rectified (io) (per Diode)

200mA (DC)

Voltage - Dc Reverse (vr) (max)

100V

Reverse Recovery Time (trr)

4ns

Diode Type

Standard

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole, Radial

Package / Case

TO-92-3 (Standard Body), TO-226

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MSD6100RLRA

Manufacturer:

MPS

Quantity:

350

Current page: 1 of 3
Download datasheet (48Kb)

MSD6100

Dual Switching Diode

Common Cathode

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Continuous package improvements have enhanced these guaranteed

*For additional information on our Pb−Free strategy and soldering details, please

March, 2006 − Rev. 3

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Reverse Voltage

Recurrent Peak Forward Current

Peak Forward Surge Current

(Pulse Width = 10 msec)

Total Device Dissipation @ T

(Note 1) Derate above = 25°C

Operating and Storage Junction

Temperature Range (Note 1)

Pb−Free Packages are Available*

Maximum Ratings as follows: P

− 8.0 mW/°C, T

Rating

= −65 to +150°C, qJC = 125°C/W.

(EACH DIODE)

= 25°C

= 1.0 W @ T

Symbol

FM(surge)

, T

stg

= 25°C, Derate above 25°C

−55 to +135

Value

100

200

500

625

5.0

mW/°C

mAdc

Unit

Vdc

°C

MSD6100

MSD6100G

MSD6100RLRA

MSD6100RLRAG

(Note: Microdot may be in either location)

Device

MSD6100 = Device Code

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

Anode 1

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

AYWW G

TO−92

MSD

6100

Publication Order Number:

3 Cathode

CASE 29−11

2 Anode

STYLE 3

TO−92

2000/Tape & Reel

5000 Units / Box

Shipping

MSD6100/D

Related parts for MSD6100RLRA

MSD6100RLRA Summary of contents

Page 1

... I 500 mAdc FM(surge) P 625 mW D 5.0 mW/°C ° −55 to +135 J stg = 25°C, Derate above 25°C C MSD6100 MSD6100G MSD6100RLRA MSD6100RLRAG 1 http://onsemi.com Anode 1 2 Anode 3 Cathode TO−92 CASE 29−11 1 STYLE MARKING DIAGRAM MSD 6100 AYWW G G MSD6100 = Device Code A = Assembly Location Y = Year ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic = 100 mAdc) Breakdown Voltage (I (BR) Reverse Current (V = 100 Vdc Vdc Vdc 125° Forward Voltage (I = 1.0 mAdc ...

Page 3

... ISSUE SECTION X−X N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

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