1N5819 Fairchild Semiconductor, 1N5819 Datasheet

DIODE SCHOTTKY 1A 40V DO41

1N5819

Manufacturer Part Number
1N5819
Description
DIODE SCHOTTKY 1A 40V DO41
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of 1N5819

Voltage - Forward (vf) (max) @ If
600mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Capacitance @ Vr, F
110pF @ 4V, 1MHz
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A @ Ta=90C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.6 V
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5819TR
1N5819TR

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1N5817 - 1N5819 Rev. C2
© 2010 Fairchild Semiconductor Corporation
1N5817 - 1N5819
Schottky Barrier Rectifier
Features
• 1.0 ampere operation at T
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
Absolute Maximum Ratings*
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
* Mounted on Cu-pad Size 5mm x 5mm on PCB
Electrical Characteristics
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Symbol
Symbol
Symbol
T
V
J,
I
R
R
I
F(AV)
FSM
P
RRM
V
C
I
T
θJA
θJC
R
D
F
T
STG
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
Operating Junction and Storage Temperature
Power Dissipation
Maximum Thermal Resistance, Junction to Ambient
Maximum Thermal Resistance, Junction to Case
Forward Voltage
Reverse Current @ rated V
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
A
= 90°C with no thermal runaway.
(per diode)
Parameter
Parameter
Parameter
.375” lead length @ T
8.3 ms Single Half-Sine Wave
T
R
A
= 25°C unless otherwise noted
COLOR BAND DENOTES CATHODE
DO-41 plastic case
@ 1.0 A
@ 3.0 A
T
T
C
C
= 25 °C
= 100 °C
1
A
= 90°C
1N5817
1N5817
450
750
20
-65 to +125
1N5818
1N5818
Value
Value
Value
1.25
100
550
875
110
1.0
0.5
30
25
45
10
1N5819
1N5819
600
900
40
November 2010
www.fairchildsemi.com
Units
Units
Units
°C/W
°C/W
mV
mV
mA
mA
°C
pF
W
V
A
A

1N5819 Summary of contents

Page 1

... Reverse Current @ rated Total Capacitance 4 1.0 MHz R * Pulse Test: Pulse Width=300μs, Duty Cycle=2% © 2010 Fairchild Semiconductor Corporation 1N5817 - 1N5819 Rev. C2 DO-41 plastic case COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted A Parameter .375” lead length @ T = 90° ...

Page 2

... Lead Temperature [ºC] Figure 1. Forward Current Derating Curve 30 25 8.3ms Single Half Sine-Wave 20 JEDEC Method Number of Cycles at 60Hz Figure 3. Non-Repetitive Surge Current © 2010 Fairchild Semiconductor Corporation 1N5817 - 1N5819 Rev 100 120 140 0.1 0.2 Figure 2. Forward Voltage Characteristics 400 200 100 ...

Page 3

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS FRFET Auto-SPM Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...

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