ES1J Fairchild Semiconductor, ES1J Datasheet - Page 2

• Manufacturer Part Number: ES1J
• Description: DIODE FAST 1A 600V SMA
• Manufacturer: Fairchild Semiconductor

Specifications of ES1J

• Voltage - Forward (vf) (max) @ If: 1.7V @ 1A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.7 V
• Recovery Time: 35 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: ES1JFSTR

ES1F - ES1J Rev. A
Typical Performance Characteristics
0.01
50
1.2
0.1
14
8.0
6.0
4.0
2.0
1.0
0.8
0.2
12
0.6
0.4
10
10
1
0.01
0
0
0.1
10
FIG.1- MAXIMUM FORWARD CURRENT DERATING
80
FIG.3- TYPICAL INSTANTANEOUS
0.4
0
FIG.5- TYPICAL JUNCTION CAPACITANCE
1
0.4
RESISTIVE OR
INDUCTIVE LOAD
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
T
PULSE WIDTH 300uS
1% DUTY CYCLE
j
=25
0.6
CURVE
FORWARD CHARACTERISTICS
0.6
90
0
o
C
0.8
FORWARD VOLTAGE. (V)
0.8
100
LEAD TEMPERATURE. ( C)
ES1F-1G
1.0
1
REVERSE VOLTAGE. (V)
1.0
110
1.2
1.2
1.4
120
1.4
o
ES1H-1J
10
1.6
1.6
130
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
1.8
1.8
140
0
150
100
2
FIG.4- TYPICAL REVERSE CHARACTERISTICS
1000
0.01
100
5.0
30
10
0.1
25
15
10
20
1
1
0
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD
20
SURGE CURRENT
Tj=125 C
Tj=25 C
Tj=85 C
40
NUMBER OF CYCLES AT 60Hz
0
0
0
60
80
10
100
8.3ms Single Half Sine Wave
(JEDEC Method) at T =120 C
120
140
L
www.fairchildsemi.com
o
100