EGF1B Fairchild Semiconductor, EGF1B Datasheet
EGF1B
Manufacturer Part Number
EGF1B
Description
DIODE FAST GPP 1A 100V SMA
Manufacturer
Fairchild Semiconductor
Datasheet
1.EGF1B.pdf
(3 pages)
Specifications of EGF1B
Voltage - Forward (vf) (max) @ If
1V @ 1A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
10µA @ 100V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
1 V
Recovery Time
50 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
10 uA
Power Dissipation
2 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
EGF1B
EGF1BTR
EGF1BTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGF1B
Manufacturer:
Fairchild Semiconductor
Quantity:
6 500
Part Number:
EGF1B
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
EGF1B-E3/67A
Manufacturer:
VISHAY
Quantity:
130 000
Company:
Part Number:
EGF1BHE3/67A
Manufacturer:
VISHAY
Quantity:
130 000
2001 Fairchild Semiconductor Corporation
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
Symbol
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 0.013 mm.
V
t
I
C
P
R
R
Features
•
•
•
rr
R
V
I
I
T
T
F(AV)
FSM
F
T
D
stg
J
RRM
JA
JL
Low forward voltage drop.
Low profile package.
Fast switching for high efficiency.
Forward Voltage @ 1.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current, @ T
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
I
V
F
R
= 0.5 A, I
= 4.0 V, f = 1.0 MHz
8.3 ms Single Half-Sine-Wave
R
= 1.0 A, I
Parameter
Parameter
Parameter
RR
EGF1A - EGF1D
= 0.25 A
R
T
A
= 25°C unless otherwise noted
T
A
T
= 25°C unless otherwise noted
T
A
A
L
= 25 C
= 100 C
= 100°C
1A
50
1A
COLOR BAND DENOTES CATHODE
SMA/DO-214AC
-65 to +175
-65 to +175
100
1B
1B
Device
Value
Value
100
1.0
1.0
30
2.0
85
30
50
10
15
150
1C
1C
200
1D
1D
EGF1A-EGF1D, Rev. D
Units
Units
Units
C/W
C/W
pF
ns
W
V
V
A
A
C
C
A
A
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EGF1B Summary of contents
Page 1
... Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol Parameter V Forward Voltage @ 1 Reverse Recovery Time 0 1 Reverse Current @ rated Total Capacitance 4 1.0 MHz R 2001 Fairchild Semiconductor Corporation EGF1A - EGF1D SMA/DO-214AC COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 100° 25°C unless otherwise noted 0. 100 C A ...
Page 2
... OSCILLOSCOPE NONINDUCTIVE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation 100 10 1 0.1 0.01 125 150 175 0.2 Figure 2 ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...