SBR1U40LP-7 Diodes Inc, SBR1U40LP-7 Datasheet - Page 2

• Manufacturer Part Number: SBR1U40LP-7
• Description: DIODE SBR 1.0A 40V 3-DFN
• Manufacturer: Diodes Inc
• Series: SBR®r

Specifications of SBR1U40LP-7

• Voltage - Forward (vf) (max) @ If: 490mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Diode Type: Super Barrier
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: 3-DFN
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Configuration: Single Dual Anode
• Forward Voltage Drop: 0.49 V
• Maximum Reverse Leakage Current: 50 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SBR1U40LPDITR

Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage (Note 3)
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave
Non-Repetitive Peak Forward Surge Current 15s DC
Power Dissipation
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 4)
Operating and Storage Temperature Range
Forward Voltage Drop
Leakage Current (Note 5)
SBR is a registered trademark of Diodes Incorporated.
Notes:
SBR1U40LP
Document number: DS31108 Rev. 10 - 2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
3. V
4. Device mounted on Polymide substrate 1” x 1”, 2oz. Copper double sided PCB board.
5. Short duration pulse test used to minimize self-heating effect.
0
0
RRM
I
F(AV)
characteristic is base on 1mA leakage current test condition
, AVERAGE FORWARD CURRENT (A)
Fig. 1 Forward Power Dissipation
Characteristic
Characteristic
Characteristic
@T
0.5
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
1
1.5
www.diodes.com
Symbol
V
I
2 of 5
R
F
T
Symbol
Symbol
V
V
J
V
R(RMS)
I
I
R
V
, T
FSM
FSM
RWM
P
RRM
I
RM
θ JA
O
D
STG
Min
0.0001
0.001
-
-
-
-
0.01
0.1
1
0
T = 125°C
V , INSTANTANEOUS FORWARD VOLTAGE (V)
A
F
0.39
0.46
0.34
0.43
Typ
T = 150°C
0.1
-
-
A
Fig. 2 Typical Forward Characteristics
-65 to +150
0.2
Value
Value
Max
0.42
0.49
0.37
0.47
100
400
190
50
1.0
2.6
40
28
5
0.3
T = -55°C
A
T = 25°C
A
T = 85°C
0.4
Unit
A
mA
μA
V
0.5
I
I
I
I
V
V
F
F
F
F
R
R
= 0.5A, T
= 1.0A, T
= 0.5A, T
= 1.0A, T
SBR1U40LP
= 40V, T
= 40V, T
Test Condition
0.6
© Diodes Incorporated
ºC/W
Unit
Unit
mW
ºC
0.7
J
J
J
J
V
V
A
A
A
J
J
January 2011
= 25ºC
= 25ºC
= 125ºC
= 125ºC
= 25ºC
= 125ºC
0.8