SS34-E3/57T Vishay, SS34-E3/57T Datasheet - Page 3

• Manufacturer Part Number: SS34-E3/57T
• Description: DIODE SCHOTTKY 3A 40V SMC
• Manufacturer: Vishay

Specifications of SS34-E3/57T

• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 500mV @ 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Repetitive Reverse Voltage Vrrm Max: 40V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 500mV
• Forward Surge Current Ifsm Max: 100A
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 3A
• Rev Curr: 500uA
• Peak Non-repetitive Surge Current (max): 100A
• Forward Voltage: 0.5V
• Operating Temp Range: -55C to 125C
• Package Type: SMC
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: SS34-E3/57TGITR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88751
Revision: 23-Jan-08
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
100
0.1
0.1
10
10
1
1
Figure 4. Typical Reverse Current Characteristics
0
0
T
Percent of Rated Peak Reverse Voltage (%)
J
0.2
= 150 °C
T
Instantaneous Forward Voltage (V)
A
20
= 125 °C
T
J
0.4
= 125 °C
T
A
= 75 °C
T
0.6
A
40
0.079 (2.06)
T
0.103 (2.62)
= 25 °C
J
0.030 (0.76)
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
= 25 °C
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0.8
For technical questions within your region, please contact one of the following:
60
Pulse Width = 300 µs
1 % Duty Cycle
1.0
SS32 - SS34
SS35 & SS36
1.2
DO-214AB (SMC)
SS32 - SS34
SS35 & SS36
80
0.305 (7.75)
0.260 (6.60)
0.320 (8.13)
0.280 (7.11)
Cathode Band
1.4
100
1.6
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
0.126 (3.20)
1000
MIN.
100
100
0.1
10
10
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
SS32 - SS34
SS35 & SS36
0.1
0.320 REF.
t - Pulse Duration (s)
Reverse Voltage (V)
0.060 (1.52)
1
MIN.
0.185 (4.69)
1
SS32 thru SS36
MAX.
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mVp-p
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100
100
3