MURS360-E3/57T Vishay, MURS360-E3/57T Datasheet
MURS360-E3/57T
Specifications of MURS360-E3/57T
Available stocks
Related parts for MURS360-E3/57T
MURS360-E3/57T Summary of contents
Page 1
... Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Document Number: 88689 Revision: 04-Jul-07 Vishay General Semiconductor FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast reverse recovery time • ...
Page 2
... MURS320 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage Maximum instantaneous reverse current at (1) rated DC blocking voltage Maximum reverse recovery time Maximum reverse recovery time Maximum forward recovery time Note: = 300 µs, duty cycle ≤ (1) Pulse test THERMAL CHARACTERISTICS (T ...
Page 3
... MIN. (3.20 MIN.) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) MURS320 Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Mounting Pad Layout ...
Page 4
... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...