MBR360 Vishay, MBR360 Datasheet - Page 2

DIODE SCHOTTKY 60V 3A C-16

MBR360

Manufacturer Part Number
MBR360
Description
DIODE SCHOTTKY 60V 3A C-16
Manufacturer
Vishay
Datasheets

Specifications of MBR360

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
730mV @ 3A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
600µA @ 60V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
C-16, Axial
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
3 A
Max Surge Current
460 A
Configuration
Single
Forward Voltage Drop
1.06 V @ 9.4 A
Maximum Reverse Leakage Current
600 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
Through Hole
Repetitive Reverse Voltage Vrrm Max
60V
Forward Current If(av)
3A
Forward Voltage Vf Max
730mV
Forward Surge Current Ifsm Max
460A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
*MBR360
VS-MBR360
VS-MBR360
VSMBR360
VSMBR360

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Document Number: 93450
MBR350, MBR360
Bulletin PD-20594 rev. C 12/04
Voltage Ratings
Electrical Specifications
Thermal-Mechanical Specifications
Absolute Maximum Ratings
(**) Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package
(*) dPtot
I
I
E
I
V
I
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
T
T
R
wt
V
V
F(AV)
FSM
AR
RM
S
FM
J
stg
AS
thJL
R
RWM
T
dTj
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current
* See Fig. 2
Typical Junction Capacitance
Typical Series Inductance
Max. Junction Temperature Range(*)
Max. Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Approximate Weight
Case Style
Max. Average Forward Current
* See Fig. 4
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Parameters
Parameters
Parameters
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(1)
(1)
(**)
Value
1.2 (0.042) g (oz.)
460
-40 to 150
-40 to 150
3.0
5.0
1.0
80
10000
Value
Value
0.58
0.73
1.06
0.49
0.64
0.89
190
0.6
9.0
15
30
8
C - 16
Units
mJ
A
A
A
Units
Units
°C/W DC operation (* See Fig. 4)
V/µs
mA
mA
mA
nH
pF
°C
°C
V
V
V
V
V
V
T
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
@ 1.0A
@ 3.0A
@ 9.4A
@ 1.0A
@ 3.0A
@ 9.4A
T
T
T
V
Measured lead to lead 5mm from package body
(Rated V
= 25 °C, I
MBR350
J
J
J
R
= 25 °C
= 100 °C
= 125 °C
= 5V
50
DC
R
AS
)
Conditions
(test signal range 100Khz to 1Mhz) 25°C
Conditions
Conditions
= 1 Amps, L = 10 mH
T
T
V
J
J
L
R
= 50°C, rectangular wave form
= 25 °C
= 125 °C
= rated V
J
max. V
A
R
Following any rated
load condition and with
rated V
= 1.5 x V
MBR360
www.vishay.com
60
RRM
R
typical
applied
2

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