BAS19,235 NXP Semiconductors, BAS19,235 Datasheet - Page 7
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BAS19,235
Manufacturer Part Number
BAS19,235
Description
DIODE GEN-PURP 120V 200MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BAS19235.pdf
(10 pages)
Specifications of BAS19,235
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 100V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
General Purpose Diodes
Peak Reverse Voltage
120 V
Forward Continuous Current
0.2 A
Max Surge Current
1.7 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933502020235
BAS19 /T3
BAS19 /T3
BAS19 /T3
BAS19 /T3
NXP Semiconductors
Product data sheet
General purpose diodes
BAS19; BAS20; BAS21
handbook, full pagewidth
t r
t p
t
D.U.T.
10%
I F
I F
Ω
t rr
R = 50
S
SAMPLING
t
OSCILLOSCOPE
Ω
R = 50
V = V
I x R
R
F
S
i
(1)
90%
V R
MGA881
input signal
output signal
(1) I
= 3 mA.
R
Fig.8 Reverse recovery voltage test circuit and waveforms.
2003 Mar 20
7