RB751V-40TE-17 Rohm Semiconductor, RB751V-40TE-17 Datasheet - Page 2
![DIODE SCHOTTKY 30V 30MA SOD323](/photos/5/26/52643/sc-90_umd2_sml.jpg)
RB751V-40TE-17
Manufacturer Part Number
RB751V-40TE-17
Description
DIODE SCHOTTKY 30V 30MA SOD323
Manufacturer
Rohm Semiconductor
Datasheet
1.RB751V-40TE-17.pdf
(4 pages)
Specifications of RB751V-40TE-17
Voltage - Forward (vf) (max) @ If
370mV @ 1mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
30mA
Current - Reverse Leakage @ Vr
500nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
0.03 A
Max Surge Current
0.2 A
Configuration
Single
Forward Voltage Drop
0.37 V @ 0.001 A
Maximum Reverse Leakage Current
0.5 uA @ 30 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB751V-40TE-17TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RB751V-40TE-17
Manufacturer:
ROHM
Quantity:
3 000
Company:
Part Number:
RB751V-40TE-17
Manufacturer:
STM
Quantity:
163
Part Number:
RB751V-40TE-17
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Electrical characteristic curves
1000
0.01
300
290
280
270
260
250
100
100
0.1
20
15
10
10
10
5
0
1
1
0.001
0
Ta=75℃
100 200 300 400 500 600 700 800 900 1000
Ta=125℃
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
Rth-t CHARACTERISTICS
IFSM DISPERSION MAP
VF DIPERSION MAP
VF分布
0.1
AVE:267.4mV
TIME:t(s)
AVE:7.30A
IM=10mA
Mounted on epoxy board
Ta=25℃
Ta=-25℃
1ms
Ifsm
300us
10
time
IF=100mA
8.3ms
Ta=25℃
n=30pcs
IF=1mA
Rth(j-a)
Rth(j-c)
1cyc
1000
0.001
0.04
0.03
0.02
0.01
0.00
1000
0.01
1000
20
15
10
100
0.1
900
800
700
600
500
400
300
200
100
5
0
10
1
0.00
0
1
0
Sin(θ=180)
IFSM-CYCLE CHARACTERISTICS
0.01
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
NUMBER OF CYCLES
AVERAGE RECTIFIED
IR DISPERSION MAP
D=1/2
10
0.02
AVE:185.5nA
Ifsm
10
0.03
8.3ms
20
1cyc
Ta=125℃
Ta=75℃
0.04
Ta=25℃
Ta=-25℃
Ta=25℃
n=30pcs
VR=30V
DC
8.3ms
0.05
30
100
0.003
0.002
0.001
0.1
10
10
9
8
7
6
5
4
3
2
1
0
1
10
0
9
8
7
6
5
4
3
2
1
0
0
0
1
Sin(θ=180)
VR-Ct CHARACTERISTICS
VR-P
REVERSE VOLTAGE:VR(V)
REVERSE VOLTAGE:VR(V)
IFSM-t CHARACTERISTICS
Ct DISPERSION MAP
10
R
10
CHARACTERISTICS
AVE:1.97pF
DC
TIME:t(ms)
Rev.B
RB751V-40
10
D=1/2
20
20
Ifsm
Ta=25℃
n=10pcs
f=1MHz
VR=1V
f=1MHz
30
t
30
2/3
100