C3D10060G Cree Inc, C3D10060G Datasheet - Page 2

DIODE SCHOT 600V 10A ZREC TO263

C3D10060G

Manufacturer Part Number
C3D10060G
Description
DIODE SCHOT 600V 10A ZREC TO263
Manufacturer
Cree Inc
Series
Z-Rec™r
Datasheets

Specifications of C3D10060G

Diode Type
Silicon Carbide Schottky
Voltage - Forward (vf) (max) @ If
1.8V @ 10A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
10A
Current - Reverse Leakage @ Vr
50µA @ 600V
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0ns
Capacitance @ Vr, F
480pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
10A
Forward Voltage Vf Max
1.8V
Forward Surge Current Ifsm Max
90A
Rectifier Type
Schottky Diode
Configuration
Single
Peak Rep Rev Volt
600V
Avg. Forward Curr (max)
10A
Rev Curr
50uA
Peak Non-repetitive Surge Current (max)
90A
Forward Voltage
1.8V
Operating Temp Range
175C
Package Type
TO-263
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C3D10060G
Manufacturer:
Cree Inc
Quantity:
135
Part Number:
C3D10060G
Manufacturer:
VISHAY
Quantity:
360
Part Number:
C3D10060G
Manufacturer:
ST
Quantity:
20 000
Part Number:
C3D10060G-TR
Manufacturer:
CREE/科锐
Quantity:
20 000
Note:
1.
Typical Performance
Electrical Characteristics
Thermal Characteristics
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
20
18
16
14
12
10
8
6
4
2
0
V
I
C
θJC
R
F
C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
C3D10060G Rev. A
T
T
T
T
J
J
J
J
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Parameter
Thermal Resistance from Junction to Case
Figure 1. Forward Characteristics
= 25°C
= 75°C
= 125°C
= 175°C
V
F
Forward Voltage (V)
Typ.
480
1.5
2.0
10
20
25
50
42
Typ.
1.2
Max.
200
1.8
2.4
50
°C/W
Unit
100
90
80
70
60
50
40
30
20
10
0
Unit
μA
nC
pF
V
0 100 200 300 400 500 600 700 800 900
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 500 A/μs
T
V
V
V
F
F
J
R
R
R
R
R
R
= 10 A T
= 10 A T
= 25°C
= 600 V, I
= 0 V, T
= 200 V, T
= 400 V, T
= 600 V T
= 600 V T
V
R
Reverse Voltage (V)
Test Conditions
J
= 25°C, f = 1 MHz
J
J
=25°C
=175°C
F
T
T
T
T
J
J
J
J
= 10 A
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
=25°C
=175°C
J
J
J
J
= 25°C
= 75°C
= 125°C
= 175°C
Note

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