STTH302 STMicroelectronics, STTH302 Datasheet - Page 3

• Manufacturer Part Number: STTH302
• Description: DIODE ULT FAST 200V 3A DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STTH302

• Voltage - Forward (vf) (max) @ If: 950mV @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Rectifier Type: Switching Diode
• Configuration: Single
• Peak Rep Rev Volt: 200V
• Avg. Forward Curr (max): 3A
• Rev Curr: 3uA
• Peak Non-repetitive Surge Current (max): 130A
• Forward Voltage: 0.95V
• Operating Temp Range: -65C to 175C
• Package Type: DO-201AD
• Rev Recov Time: 35ns
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-2445-3

Fig. 3: Thermal resistance versus lead length.
Fig. 1: Average forward power dissipation versus
average forward current.
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
Fig. 5: Forward voltage drop versus forward
current.
100.0
0
10.0
1.0
0.1
0.0
5
Rth(°C/W)
PF(av)(W)
0.0
IFM(A)
0.2
0.5
(Typical values)
(Typical values)
0.4
10
Tj=125°C
Tj=125°C
1.0
(Maximum values)
(Maximum values)
= 0.05
Tj=125°C
Tj=125°C
0.6
1.5
Lleads(mm)
= 0.1
IF(av)(A)
0.8
Rth(j-a)
Rth(j-l)
VFM(V)
15
1.0
2.0
= 0.2
(Maximum values)
1.2
Tj=25°C
2.5
20
1.4
= 0.5
=tp/T
3.0
1.6
T
= 1
tp
3.5
1.8
25
Fig. 2: Average forward current versus ambient
temperature ( =0.5).
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, LIeads = 10mm).
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1.E-01
0
IF(av)(A)
Zth(j-a)/Rth(j-a)
1
C(pF)
Single pulse
= 0.5
= 0.2
= 0.1
25
1.E+00
Rth(j-a)=75°C/W
50
10
Rth(j-a)=Rth(j-l)
75
Tamb(°C)
1.E+01
tp(s)
VR(V)
100
100
1.E+02
125
=tp/T
STTH302
150
Vosc=30mV
T
F=1MHz
Tj=25°C
tp
1.E+03
1000
3/5
175