BAS16HT1G ON Semiconductor, BAS16HT1G Datasheet - Page 8

DIODE SWITCH 200MA 75V SOD323

BAS16HT1G

Manufacturer Part Number
BAS16HT1G
Description
DIODE SWITCH 200MA 75V SOD323
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS16HT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
1µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
6ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Product
Switching Diodes
Peak Reverse Voltage
75 V
Forward Continuous Current
0.2 A
Configuration
Single
Recovery Time
6 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
1 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Rectifier Type
Small Signal Switching Diode
Peak Rep Rev Volt
75V
Avg. Forward Curr (max)
0.2A
Rev Curr
1uA
Peak Non-repetitive Surge Current (max)
0.5A
Forward Voltage
1.25V
Operating Temp Range
-55C to 150C
Package Type
SOD-323
Rev Recov Time
6ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
75V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
6ns
Forward Surge Current Ifsm Max
500mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16HT1GOSTR

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Final Product/Process Change Notification #16266
SC88 and SC88A
MSQA6V1W5T2G
Test:
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
RSH
ELECTRICAL CHARACTERIZATION PLAN:
Datasheet specifications and product electrical performance will remain unchanged
Characterization of each qual vehicle device will be performed to the following requirements:
ELECTRICAL CHARACTERIZATION RESULTS:
Available upon request
CHANGED PART IDENTIFICATION:
Products assembled with the Copper Wire from the ON Semiconductor facility will have a Finish
Good Date Code representing Work Week 35, 2009 (date code 9) or newer.
Issue Date: 08 Jun 2009
1) Three temperature characterization on 30 units from 3 lots
2) ESD performance ( HBM, MM) on 15 units from 1 lot
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Rev.14 Jun 2007
Interval:
1000 cyc
1008 hrs
96 hrs
Results
0/480
0/240
0/240
0/240
0/6
0/90
Page 8 of 36

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