MUR160RLG ON Semiconductor, MUR160RLG Datasheet - Page 2
MUR160RLG
Manufacturer Part Number
MUR160RLG
Description
DIODE ULTRA FAST 1A 600V DO-41
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MUR160RLG.pdf
(7 pages)
Specifications of MUR160RLG
Voltage - Forward (vf) (max) @ If
1.25V @ 1A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.25 V
Recovery Time
75 ns
Forward Continuous Current
1 A @ Ta=120C
Max Surge Current
35 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
1A
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
35A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MUR160RLGOS
MUR160RLGOS
MUR160RLGOSTR
MUR160RLGOS
MUR160RLGOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUR160RLG
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Square Wave Mounting Method #3 Per Note 2)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
Operating Junction Temperature and Storage Temperature
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 1)
(i
(i
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
(Rated DC Voltage, T
Maximum Reverse Recovery Time
(I
(I
Maximum Forward Recovery Time
(I
F
F
F
F
F
= 1.0 Amp, T
= 1.0 Amp, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, i
= 1.0 A, di/dt = 100 A/ms, I
R
= 1.0 A, I
J
J
= 150°C)
= 25°C)
J
J
= 150°C)
= 25°C)
REC
Characterisic
Rating
= 0.25 A)
REC
to 1.0 V)
http://onsemi.com
MUR120 Series
Symbol
Symbol
T
V
V
I
2
R
I
J
F(AV)
RWM
FSM
RRM
V
, T
v
i
t
t
qJA
R
rr
fr
F
R
stg
105
50
1.0 @ T
100
110
0.710
0.875
2.0
50
35
25
25
A
= 130°C
115
150
*65 to +175
Note 2
MUR
Max
120
200
35
130
300
1.0 @ T
1.05
1.25
140
400
150
5.0
75
50
50
A
= 120°C
160
600
°C/W
Unit
Unit
°C
mA
ns
ns
V
A
A
V