MBRA140T3G ON Semiconductor, MBRA140T3G Datasheet - Page 2

• Manufacturer Part Number: MBRA140T3G
• Description: DIODE SCHOTTKY 40V 1A SMA
• Manufacturer: ON Semiconductor

Specifications of MBRA140T3G

• Voltage - Forward (vf) (max) @ If: 550mV @ 1A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Configuration: Single
• Forward Voltage Drop: 0.71 V @ 2 A
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 1A
• Rev Curr: 500uA
• Peak Non-repetitive Surge Current (max): 30A
• Forward Voltage: 0.71V
• Operating Temp Range: -55C to 125C
• Package Type: SMA
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRA140T3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Non−Repetitive Peak Surge Current
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change
ESD Ratings:
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
see Figure 2 for other Values
Maximum Instantaneous Reverse Current
see Figure 4 for other Values
(At Rated V
(At Rated V
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
(Rated V
R
, T
R
R
, T
, Square Wave, 20 kHz, T
J
= 25°C)
C
Machine Model = C
Human Body Model = 3B
= 95°C)
Characteristic
C
Rating
= 100°C)
http://onsemi.com
(V
(V
(I
(I
F
F
R
R
2
= 1.0 A)
= 2.0 A)
= 40 V)
= 20 V)
Symbol
R
R
V
I
qJL
qJA
R
F
T
T
Symbol
J
J
V
V
I
dv/dt
I
0.55
0.71
= 25°C
= 25°C
T
FRM
FSM
RWM
0.5
0.1
RRM
V
T
I
stg
O
R
J
Value
35
86
−55 to +150
−55 to +125
T
T
J
J
> 8000
10,000
Value
> 400
0.505
= 100°C
= 100°C
0.74
1.0
2.0
4.0
40
30
10
°C/W
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
V
V