MBRM140T1G ON Semiconductor, MBRM140T1G Datasheet - Page 3
![DIODE SCHOTTKY 40V 1A POWERMITE](/photos/5/27/52796/powermite_sml.jpg)
MBRM140T1G
Manufacturer Part Number
MBRM140T1G
Description
DIODE SCHOTTKY 40V 1A POWERMITE
Manufacturer
ON Semiconductor
Specifications of MBRM140T1G
Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
Powermite®
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Configuration
Single
Forward Voltage Drop
0.85 V @ 3 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Current, Forward
1 A
Current, Reverse
25 mA
Current, Surge
50 A
Package Type
Case 457
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Voltage, Forward
0.55 V
Voltage, Reverse
40 V
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
1A
Forward Voltage Vf Max
550mV
Forward Surge Current Ifsm Max
50A
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRM140T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBRM140T1G
Manufacturer:
ON
Quantity:
63 000
Company:
Part Number:
MBRM140T1G
Manufacturer:
ON
Quantity:
60 000
Part Number:
MBRM140T1G
Manufacturer:
ON/安森美
Quantity:
20 000
100E−6
1.0E−3
1.0E−6
10E−3
10E−6
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
0
25
0
0
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
T
This graph displays the derated allowable T
where r(t) = Rthja. For other power applications further calculations must be performed.
J
may be calculated from the equation:
35
5.0
SQUARE WAVE
Figure 3. Typical Reverse Current
45
V
I
I
V
T
I
pk
pk
Figure 5. Current Derating
I
R
pk
pk
10
R
L
, REVERSE VOLTAGE (VOLTS)
10
/I
/I
dc
, LEAD TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
/I
/I
55
o
o
Figure 7. Capacitance
o
o
= 20
= 10
= p
= 5
15
65
T
T
J
J
75
20
= 85°C
= 25°C
20
85
25
T
95
J
FREQ = 20 kHz
= 25°C
30
J
J
30
105
therefore must include forward and reverse power effects. The allowable operating
due to reverse bias under DC conditions only and is calculated as T
T
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
J
= T
35
115
Jmax
MBRM140
125
40
40
− r(t)(Pf + Pr) where
3
100E−3
100E−6
1.0E−3
10E−6
10E−3
125
105
115
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
95
85
75
0
Figure 8. Typical Operating Temperature Derating*
0
0
51°C/W
0
I
pk
69°C/W
/I
5.0
0.2
I
O
o
Figure 6. Forward Power Dissipation
, AVERAGE FORWARD CURRENT (AMPS)
= 20
Figure 4. Maximum Reverse Current
V
R
83.53°C/W
V
, DC REVERSE VOLTAGE (VOLTS)
I
pk
R
0.4
10
, REVERSE VOLTAGE (VOLTS)
10
/I
o
= 10
0.6
15
R
I
T
pk
tja
T
J
/I
J
= 25°C
o
0.8
= 33.72°C/W
20
= 85°C
20
= 5
96°C/W
I
pk
/I
1.0
25
o
= p
J
SQUARE
= T
1.2
30
WAVE
30
Jmax
1.4
35
− r(t)Pr,
dc
1.6
40
40