MBRS2040LT3G ON Semiconductor, MBRS2040LT3G Datasheet - Page 4

• Manufacturer Part Number: MBRS2040LT3G
• Description: DIODE SCHOTTKY 40V 2A SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS2040LT3G

• Voltage - Forward (vf) (max) @ If: 430mV @ 2A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 800µA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 2 A
• Max Surge Current: 70 A
• Configuration: Single
• Forward Voltage Drop: 0.5 V @ 4 A
• Maximum Reverse Leakage Current: 800 uA
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Current, Forward: 2 A
• Current, Reverse: 20 mA
• Current, Surge: 70 A
• Package Type: SMB
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Voltage, Forward: 0.43 V
• Voltage, Reverse: 40 V
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 2A
• Rev Curr: 800uA
• Peak Non-repetitive Surge Current (max): 70A
• Forward Voltage: 0.5V
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS2040LT3GOSTR

1000
100
0.001
0.001
10
0.01
0.01
1.0
0.1
1.0
0.1
0
0.00001
0.00001
5.0%
2.0%
1.0%
50%
20%
10%
5.0%
2.0%
1.0%
50%
20%
10%
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T J therefore must include forward and reverse power effects. The allowable operating
T J may be calculated from the equation:
This graph displays the derated allowable T J due to reverse bias under DC conditions only and is calculated as T J = T Jmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
5.0
10
V R , REVERSE VOLTAGE (VOLTS)
0.0001
Figure 7. Capacitance
0.0001
15
Rtjl(t) = Rtjl*r(t)
20
Figure 10. Thermal Response Junction to Ambient
0.001
Figure 9. Thermal Response Junction to Lead
25
0.001
T J = 25 C
Rtjl(t) = Rtjl*r(t)
30
0.01
35
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
T J = T Jmax − r(t)(Pf + Pr) where
http://onsemi.com
MBRS2040LT3
0.01
T, TIME (s)
T, TIME (s)
40
4
0.1
125
105
115
95
85
75
65
Figure 8. Typical Operating Temperature Derating*
0
0.1
5.0
1.0
V R , DC REVERSE VOLTAGE (VOLTS)
10
1.0
15
10
20
42 C/W
61 C/W
25
10
78 C/W
100
30
R tja = 22.5 C/W
92 C/W
35
1,000
100
40