MBR160G ON Semiconductor, MBR160G Datasheet

DIODE SCHOTTKY 1A 60V DO-41

MBR160G

Manufacturer Part Number
MBR160G
Description
DIODE SCHOTTKY 1A 60V DO-41
Manufacturer
ON Semiconductor
Datasheets

Specifications of MBR160G

Voltage - Forward (vf) (max) @ If
750mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
1 V @ 3 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 150 C
Mounting Style
Through Hole
Current, Forward
1 A
Current, Reverse
5 mA
Current, Surge
25 A
Package Type
DO-41
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-65 to +150 °C
Voltage, Forward
1 V
Voltage, Reverse
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBR160G
MBR160GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MBR160G
Manufacturer:
ON
Quantity:
3 000
MBR150, MBR160
Axial Lead Rectifiers
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Mechanical Characteristics:
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Forward Current (Note 1)
(V
R
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz, T
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
Thermal Resistance, Junction−to−Ambient
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
The MBR150/160 series employs the Schottky Barrier principle in a
Leads are Readily Solderable
260°C Max. for 10 Seconds
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
These are Pb−Free Devices*
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Lead Temperature for Soldering Purposes:
Polarity: Cathode Indicated by Polarity Band
qJA
R(equiv)
= 80°C/W, P.C. Board Mounting, T
v 0.2 V
Characteristic
R
(dc), T
Rating
MBR160 is a Preferred Device
L
= 90°C,
L
= 70°C)
A
(Notes 1 and 2)
MBR150
MBR160
MBR150
MBR160
= 55°C)
Symbol
V
Symbol
T
V
V
R(RMS)
R
I
J
FSM
RWM
V
RRM
, T
I
qJA
O
R
stg
(for one
− 65 to
Value
cycle)
+150
Max
1.0
50
60
35
42
25
80
1
°C/W
Unit
Unit
°C
V
V
A
A
1.0 AMPERE − 50 AND 60 VOLTS
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
SCHOTTKY BARRIER
A
MBR1x0 = Device Code
Y
WW
G
ORDERING INFORMATION
MARKING DIAGRAM
RECTIFIERS
= Assembly Location
= Year
= Work Week
= Pb−Free Package
x = 5 or 6
YYWW G
MBR1x0
A
G
AXIAL LEAD
CASE 59
STYLE 1
DO−41

Related parts for MBR160G

MBR160G Summary of contents

Page 1

... Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 1.0 AMPERE − ...

Page 2

ELECTRICAL CHARACTERISTICS (T Characteristic Maximum Instantaneous Forward Voltage (Note Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 25° ...

Page 3

... ORDERING INFORMATION Device MBR150 MBR150G MBR150RL MBR150RLG MBR160 MBR160G MBR160RL MBR160RLG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. MBR150, MBR160 (Subscripts A and K refer to anode and cathode sides, respectively ...

Page 4

MBR150, MBR160 PACKAGE DIMENSIONS POLARITY INDICATOR OPTIONAL AS NEEDED F (SEE STYLES) K AXIAL LEAD CASE 59−10 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES ...

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