1N5817G ON Semiconductor, 1N5817G Datasheet - Page 4

DIODE SCHOTTKY 1A 20V DO-41

1N5817G

Manufacturer Part Number
1N5817G
Description
DIODE SCHOTTKY 1A 20V DO-41
Manufacturer
ON Semiconductor
Datasheets

Specifications of 1N5817G

Voltage - Forward (vf) (max) @ If
450mV @ 1A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
1mA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
DO-204AL, DO-41, Axial
Product
Schottky Diodes
Peak Reverse Voltage
20 V
Forward Continuous Current
1 A @ Ta=55C
Max Surge Current
25 A
Configuration
Single
Forward Voltage Drop
0.75 V @ 3 A
Maximum Reverse Leakage Current
1000 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
Through Hole
Current, Forward
1 A
Current, Reverse
10 mA
Current, Surge
25 A
Package Type
Case 59-10
Primary Type
Schottky Barrier
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-65 to +125 °C
Voltage, Forward
0.45 V
Voltage, Reverse
20 V
Rectifier Type
Schottky Diode
Peak Rep Rev Volt
20V
Avg. Forward Curr (max)
1A
Rev Curr
1000uA
Peak Non-repetitive Surge Current (max)
25A
Forward Voltage
0.75V
Operating Temp Range
-65C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1N5817G
1N5817GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1N5817G
Manufacturer:
ON
Quantity:
2 000
Part Number:
1N5817G
Manufacturer:
ON Semiconductor
Quantity:
1 650
(R
line values for preliminary engineering, or in case the tie
point temperature cannot be measured.
Mounting
90
80
70
60
50
40
30
20
10
Method
0.07
0.05
0.03
0.02
0.01
Data shown for thermal resistance, junction−to−ambient
qJA
1.0
0.7
0.5
0.3
0.2
0.1
2
3
1
1
0.1
) for the mountings shown is to be used as typical guide-
Figure 4. Steady−State Thermal Resistance
TYPICAL VALUES FOR R
1/8
NOTE 4. — MOUNTING DATA
BOTH LEADS TO HEATSINK,
0.2
1/8
52
67
EQUAL LENGTH
1/4
L, LEAD LENGTH (INCHES)
MAXIMUM
0.5
Lead Length, L (in)
3/8
1/4
65
80
1.0
50
1/2
1/2
72
87
qJA
2.0
5/8
TYPICAL
IN STILL AIR
100
3/4
85
3/4
5.0
1N5817, 1N5818, 1N5819
Figure 6. Thermal Response
7/8
10
http://onsemi.com
R
°C/W
°C/W
°C/W
qJA
t, TIME (ms)
1.0
20
4
0.07
0.05
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
L
VECTOR PIN MOUNTING
50
0.2
Mounting Method 1
Sine Wave
I
I
Capacitive
(FM)
(AV)
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
Loads
L
Mounting Method 2
= π (Resistive Load)
DT
DT
r(t) = normalized value of transient thermal resistance at time, t, from Figure 6,
i.e.:
r(t) =
100
t
JL
JL
Z
p
Figure 5. Forward Power Dissipation
qJL(t)
{
= P
= the increase in junction temperature above the lead temperature
r(t
1
pk
I
+ t
0.4
L
F(AV)
10
20
• R
5
p
= Z
) = normalized value of transient thermal resistance at time, t
200
qJL
t
, AVERAGE FORWARD CURRENT (AMP)
1
qJL
P
[D + (1 − D) • r(t
pk
• r(t)
L
0.6
1N5817−19
500
0.8
P
pk
1
TIME
+ t
p
1.0
L = 3/8″
) + r(t
1.0k
p
BOARD GROUND
DUTY CYCLE, D = t
PEAK POWER, P
an
equivalent square power pulse.
) − r(t
Mounting Method 3
T
1−1/2″ x 1−1/2″
copper surface.
PLANE
P.C. Board with
1
SQUARE WAVE
J
)] where
≈ 125°C
2.0k
2.0
pk
, is peak of
p
dc
/t
1
5.0k
1
+ t
p
.
10k
4.0

Related parts for 1N5817G