1N5406G ON Semiconductor, 1N5406G Datasheet

1N5406G

Manufacturer Part Number

1N5406G

Description

DIODE STD REC 3A 600V DO-201AD

Manufacturer

ON Semiconductor

Datasheets

1.1N5404RLG.pdf (6 pages)

2.1N5408G.pdf (5 pages)

Specifications of 1N5406G

Voltage - Forward (vf) (max) @ If

1V @ 3A

Voltage - Dc Reverse (vr) (max)

600V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

10µA @ 600V

Diode Type

Standard

Speed

Standard Recovery >500ns, > 200mA (Io)

Mounting Type

Through Hole

Package / Case

DO-201AD, Axial

Product

Standard Recovery Rectifier

Configuration

Single

Reverse Voltage

600 V

Forward Voltage Drop

1 V

Forward Continuous Current

3 A

Max Surge Current

200 A

Reverse Current Ir

10 uA

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Current, Forward

3 A

Current, Reverse

50 μA

Current, Surge

200 A

Package Type

Plastic Case

Primary Type

Rectifier

Speed, Switching

Standard

Temperature, Junction, Maximum

+150 °C

Temperature, Operating

-65 to +150 °C

Voltage, Forward

1 V

Voltage, Reverse

600 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1N5406GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

1N5406G

Manufacturer:

LRC/乐山

Quantity:

20 000

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PRODUCT BULLETIN

Generic Copy

03 Jun 2008

SUBJECT: ON Semiconductor Product Bulletin #16123

TITLE: Data Sheet Update for 1N5400-series Rectifier Devices

PROPOSED FIRST SHIP DATE: 03 Jun 2008

AFFECTED PRODUCT DIVISION: Automotive & Power Regulation Group

FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION:

Contact your local ON Semiconductor sales office or Mike Schager <mike.schager@onsemi.com>

NOTIFICATION TYPE:

ON Semiconductor considers this change approved. There is no change to form, fit, or function of the

affected devices.

DESCRIPTION AND PURPOSE:

ON Semiconductor has updated the 1N5400-series data sheet with the following changes.

Ifsm Rating Condition 8.3mS Single Half-Sine-Wave

Ifsm Curve Tj = 25C

Operating Junction Temperature Range is changed to -65C to +150C

Hot Ir Condition and Limit are changed to 100C and 50 micro amps

Figures 3 & 4 Current Derating Temperature changed to 150C

Issue Date: 03 Jun 2008

Rev.07-02-06

Page 1 of 2

Related parts for 1N5406G

1N5406G Summary of contents

Page 1

... FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor sales office or Mike Schager <mike.schager@onsemi.com> NOTIFICATION TYPE: ON Semiconductor considers this change approved. There is no change to form, fit, or function of the affected devices. DESCRIPTION AND PURPOSE: ON Semiconductor has updated the 1N5400-series data sheet with the following changes. ...

Page 2

... Product Bulletin #16123 AFFECTED DEVICE LIST PART 1N5400 1N5400G 1N5400RL 1N5400RLG 1N5401 1N5401G 1N5401RL 1N5401RLG 1N5402 1N5402G 1N5402RL 1N5402RLG 1N5404 1N5404G 1N5404RL 1N5404RLG 1N5406 1N5406G 1N5406RL 1N5406RLG 1N5407 1N5407G 1N5407RL 1N5407RLG 1N5408 1N5408G 1N5408RL 1N5408RLG Issue Date: 03 Jun 2008 Rev.07-02-06 Page ...

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