MBRS4201T3G ON Semiconductor, MBRS4201T3G Datasheet - Page 3
![DIODE SCHOTTKY 4A 200V SMC](/photos/5/37/53713/488-do-214ab_sml.jpg)
MBRS4201T3G
Manufacturer Part Number
MBRS4201T3G
Description
DIODE SCHOTTKY 4A 200V SMC
Manufacturer
ON Semiconductor
Datasheet
1.MBRS4201T3G.pdf
(4 pages)
Specifications of MBRS4201T3G
Voltage - Forward (vf) (max) @ If
860mV @ 4A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
4A
Current - Reverse Leakage @ Vr
1mA @ 200V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AB, SMC
Product
Schottky Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
4 A
Max Surge Current
100 A
Configuration
Single
Recovery Time
35 ns
Forward Voltage Drop
0.8 V
Maximum Reverse Leakage Current
0.35 uA
Operating Temperature Range
- 55 C to + 150 C
Mounting Style
SMD/SMT
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
4A
Forward Voltage Vf Max
860mV
Reverse Recovery Time Trr Max
35ns
Forward Surge Current Ifsm Max
100A
Diode Case Style
SMC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MBRS4201T3G
MBRS4201T3GOSTR
Q2726533
MBRS4201T3GOSTR
Q2726533
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBRS4201T3G
Manufacturer:
TDK
Quantity:
23 000
Company:
Part Number:
MBRS4201T3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MBRS4201T3G
Manufacturer:
ON/安森美
Quantity:
20 000
7
6
5
4
3
2
1
0
0
20
T
L
Figure 6. Derating Curve
40
, LEAD TEMPERATURE (°C)
60
SQUAREWAVE
80
1000
100
−0.5
−1.0
−1.5
−2.0
−2.5
10
2.5
2.0
1.5
1.0
0.5
1
Figure 8. Reverse Recovery Time* (t
0
0
100
DC
20
120
40
Figure 5. Typical Capacitance
MBRS4201
V
140 160
R
http://onsemi.com
60
, REVERSE VOLTAGE (V)
T, TIME (10 ns/div)
80
3
100 120 140 160 180 200
200 V Ultrafast
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
RR
) at 1255C
1
I
O
, AVERAGE FORWARD CURRENT
Figure 7. Power Dissipation
SQUAREWAVE
2
ON Semiconductor MBRS4201
eliminates reverse recovery
oscillations present in Ultrafast
devices in the market, particularly at
hot temperatures.
*Test Conditions:
I
V
F
R
= 1 A, d
= 30 V
3
I
/d
DC
T
4
= 100 A/ms,
5
6