MUR460G ON Semiconductor, MUR460G Datasheet - Page 2

• Manufacturer Part Number: MUR460G
• Description: DIODE ULTR FAST 4A 600V DO-201AD
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MUR460G

• Voltage - Forward (vf) (max) @ If: 1.28V @ 4A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 4A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.28 V
• Recovery Time: 75 ns
• Forward Continuous Current: 4 A @ Ta=40C
• Max Surge Current: 110 A
• Reverse Current Ir: 10 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Current, Forward: 4 A
• Current, Reverse: 250 μA
• Current, Surge: 110 A
• Package Type: DO-201AD
• Primary Type: Rectifier
• Speed, Switching: Ultrafast
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Time, Recovery: 75 ns
• Voltage, Forward: 1.28 V
• Voltage, Reverse: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MUR460G; MUR460GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (Square Wave)
(Mounting Method #3 Per Note 2)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase, 60 Hz)
Operating Junction Temperature & Storage Temperature
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 1)
(i
(i
(i
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, T
(Rated dc Voltage, T
Maximum Reverse Recovery Time
(I
(I
Maximum Forward Recovery Time
(I
Controlled Avalanche Energy (Maximum)
F
F
F
F
F
F
= 3.0 A, T
= 3.0 A, T
= 4.0 A, T
= 1.0 A, di/dt = 50 A/ms)
= 0.5 A, i
= 1.0 A, di/dt = 100 A/ms, Recovery to 1.0 V)
R
J
J
J
= 1.0 A, I
= 150°C)
= 25°C)
= 25°C)
J
J
= 150°C)
= 25°C)
REC
= 0.25 A)
Rating
Rating
Rating
http://onsemi.com
2
Symbol
Symbol
Symbol
T
V
V
W
I
R
I
J
F(AV)
RWM
FSM
V
RRM
, T
v
i
t
t
qJA
aval
R
rr
fr
R
F
stg
405
405
405
50
4.0 @ T
410
100
410
410
0.71
0.88
0.89
125
150
35
25
25
5
A
*65 to +175
See Note 2
= 80°C
415
150
415
415
MUR
MUR
MUR
420
200
420
420
5
440
400
440
440
T
A
4.0 @
1.05
1.25
1.28
= 40°C
110
250
10
75
50
50
460
600
460
460
°C/W
Unit
Unit
Unit
mJ
°C
mA
ns
ns
V
A
A
V