BYW29-200G ON Semiconductor, BYW29-200G Datasheet - Page 3

• Manufacturer Part Number: BYW29-200G
• Description: DIODE ULT FAST 200V 8A TO-220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BYW29-200G

• Voltage - Forward (vf) (max) @ If: 1.3V @ 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.3 V at 20 A
• Recovery Time: 35 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 100 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BYW29-200G; BYW29-200GOS

0.05
0.02
0.01
1.0
0.5
0.2
0.1
8.0
6.0
4.0
2.0
14
12
10
0.01
0
0
SQUARE WAVE
SQUARE WAVE
20
0.02
Figure 4. Current Derating, Ambient
40
dc
dc
T
SINGLE PULSE
D = 0.5
A
0.05
, AMBIENT TEMPERATURE (°C)
60
0.05
0.01
0.1
80
0.1
100
1000
300
100
30
10
0.2
1.0
120
140
R
R
(NO HEAT SINK)
0.5
qJA
qJA
Figure 7. Typical Capacitance
Figure 6. Thermal Response
160
= 16°C/W
= 60°C/W
1.0
V
R
http://onsemi.com
180
, REVERSE VOLTAGE (V)
t, TIME (ms)
200
2.0
10
3
5.0
P
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
DUTY CYCLE, D = t
10
(pk)
T
0
J
0
= 25°C
10
T
1.0
t
J
1
= 175°C
t
2
I
2.0
F(AV)
20
1
Figure 5. Power Dissipation
/t
, AVERAGE FORWARD CURRENT (AMPS)
2
3.0
100
50
Z
R
4.0
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T
T
qJC(t)
J(pk)
qJC
SQUARE WAVE
- T
= 1.5 °C/W MAX
5.0
= r(t) R
100
C
= P
(pk)
6.0
qJC
Z
200
qJC(t)
1
7.0
8.0
500
dc
9.0
1000
10