BYV29B-500,118 NXP Semiconductors, BYV29B-500,118 Datasheet - Page 3

• Manufacturer Part Number: BYV29B-500,118
• Description: DIODE RECT UFAST 500V D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BYV29B-500,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Voltage - Forward (vf) (max) @ If: 1.25V @ 8A
• Voltage - Dc Reverse (vr) (max): 500V
• Current - Average Rectified (io): 9A
• Current - Reverse Leakage @ Vr: 50µA @ 500V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 500 V
• Forward Voltage Drop: 1.4 V at 20 A
• Recovery Time: 60 ns
• Forward Continuous Current: 9 A
• Max Surge Current: 110 A
• Reverse Current Ir: 50 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-3434-2; 934056951118; BYV29B-500 /T3

Philips Semiconductors
September 2001
Rectifier diodes
ultrafast
1000
100
10
Fig.6. Maximum I
1
0.01
Fig.5. Maximum t
0.1
1
10
1
trr / ns
Tj = 25 C
Tj = 100C
1
Irrm / A
Tj = 25 C
Tj = 100C
rrm
dIF/dt (A/us)
-dIF/dt (A/us)
rr
at T
at T
10
10
IF=10A
IF=10 A
j
IF=1A
j
= 25˚C and 100˚C
= 25˚C and 100˚C.
1A
100
100
3
Fig.7. Typical and maximum forward characteristic
Fig.9. Transient thermal impedance Z
0.001
1000
100
0.01
30
20
10
10
1
0.1
0
10
1
1us
1.0
0
IF / A
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
Fig.8. Maximum Q
Tj=150 C
Tj=25 C
10us
I
F
0.5
= f(V
100us
pulse width, tp (s)
F
typ
); parameter T
-dIF/dt (A/us)
1ms
VF / V
P
10
1
D
IF = 10 A
2 A
10ms 100ms
s
at T
t
p
Product specification
T
j
BYV29B-500
= 25˚C
1.5
max
j
D =
BYV29
BYW29
t
T
p
1s
th j-mb
t
Rev 1.000
= f(t
100
10s
2
p
)